Journal ArticleDOI
Etch Properties of Resists Modified by Sequential Infiltration Synthesis
Yu-Chih Tseng,Qing Peng,Leonidas E. Ocola,David A. Czaplewski,Jeffrey W. Elam,Seth B. Darling +5 more
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TLDR
In this article, the etch resistance of electron-beam lithography resists, poly(methyl methacrylate) (PMMA) and ZEP520A, is increased significantly by sequential infiltration synthesis (SIS).Abstract:
The etch resistance of electron-beam lithography resists, poly(methyl methacrylate) (PMMA) and ZEP520A, is increased significantly by sequential infiltration synthesis (SIS). This process infiltrates the bulk of the resist film with alumina, rendering it resistant to plasma etching. The enhanced etch resistance eliminates the need for an intermediate hard mask and the associated process costs and pattern fidelity losses. Furthermore, the improvement is realized with no degradation to the line-edge roughness of lithographically defined patterns. The enhancement in etch resistance is especially strong at the edges of the printed lines, owing to diffusion of the SIS precursors from the resist sidewalls. These improvements enable the anisotropic transfer of sub-100 nm patterns deeply into silicon without the need for an intermediate hard mask.read more
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Patent
Process feed management for semiconductor substrate processing
Fred Pettinger,Carl White,Dave Marquardt,Sokol Ibrani,Eric Shero,Todd Dunn,Kyle Fondurulia,Mike Halpin +7 more
TL;DR: In this paper, a gas channel plate for a semiconductor process module is described, which includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps.
Patent
Sequential Infiltration Synthesis for Advanced Lithography
TL;DR: In this article, a modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material.
Patent
Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
TL;DR: In this paper, a process and system for depositing a thin film onto a substrate using atomic layer deposition (ALD) is described. But it is not shown how to apply ALD to a metal oxide layer.
Patent
Process gas management for an inductively-coupled plasma deposition reactor
Fred Alokozai,Robert B. Milligan +1 more
TL;DR: In this paper, the authors describe a process gas distributor, an insulating confinement vessel, and an inductively coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil.
Patent
Semiconductor reaction chamber showerhead
TL;DR: In this paper, a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned inside the opening, and having the same number of slots.
References
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Nucleation and Growth during Al2O3 Atomic Layer Deposition on Polymers
TL;DR: In this paper, the nucleation and growth during Al2O3 atomic layer deposition (ALD) were explored on a variety of polymer films at 85 °C, using sequential exposures of Al(CH3)3 [trimethylalumi...
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Nanoscopic Patterned Materials with Tunable Dimensions via Atomic Layer Deposition on Block Copolymers
TL;DR: Selective self-limited interaction of metal precursors with self-assembled block copolymer substrates, combined with the unique molecular-level management of reactions enabled by the atomic layer deposition process, is presented as a promising controllable way to synthesize patterned nanomaterials with uniform and tunable dimensions.
Journal ArticleDOI
A Route to Nanoscopic Materials via Sequential Infiltration Synthesis on Block Copolymer Templates
TL;DR: This work presents a straightforward strategy to selectively modify self-assembled polystyrene-block-poly(methyl methacrylate) BCP thin films to enable the SIS of a variety of materials including SiO(2), ZnO, and W.
Journal ArticleDOI
Selective-Area Atomic Layer Deposition Using Poly(methyl methacrylate) Films as Mask Layers
TL;DR: In this article, the authors used poly(methyl methacrylate) (PMMA) films as growth inhibiting mask layers for selective area atomic layer deposition (ALD) in both noble metals and oxides.
Journal ArticleDOI
A top surface imaging method using area selective ALD on chemically amplified polymer photoresist films
TL;DR: The Electrochemical Society of America (ECS) as discussed by the authors has published a survey of the state-of-the-art work in the field of bioelectrical engineering with a focus on bioelectronics.