Journal ArticleDOI
Fabrication and High-Temperature Characteristics of Ion-Implanted GaAs Bipolar Transistors and Ring-Oscillators
TLDR
In this paper, bipolar transistors and ring-oscillators were fabricated by ion implantation into VPE structures, and the transistor and circuit performance was tested between 25°C and 400°C.Abstract:
GaAs bipolar transistors and ring-oscillators were fabricated by ion implantation into VPE structures. The transistor and circuit performance was tested between 25°C and 400°C. Leakage currents determine the useful temperature range. Present GaAs circuits fail at approximately 390°C due to the metallization technology.read more
Citations
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Journal ArticleDOI
A new GaAs technology for stable FETs at 300 degrees C
TL;DR: It is shown that MESFETs produced with this technology demonstrate a remarkable stability of their characteristics, even after 100 h of storage at 300 degrees C, and only a little degradation after100 h at 400 degrees C.
Journal ArticleDOI
GaAs/AlGaAs heterojunction bipolar transistors for integrated circuit applications
William V. McLevige,H.T. Yuan,W. M. Duncan,William R. Frensley,F. H. Doerbeck,Hadis Morkoç,T.J. Drummond +6 more
TL;DR: In this paper, the authors used molecular-beam epitaxy (MBE) and ion implantation to fabricate GaAs/AlGaAs heterojunction bipolar transistors with buried wide bandgap emitters.
Potential and problems of high-temparature electronics and CMOS integrated circuits (25-250℃)-an overview
TL;DR: A brief overview of high-temperature integrated circuit technologies is presented in this article, where the relative merits of several semiconductor materials, technologies, devices and digital and analog circuits are highlighted.
Journal ArticleDOI
Recent Advances in Gallium Phosphide Junction Devices for High-Temperature Electronic Applications
TL;DR: In this article, the performance of gallium phosphide (GaP) diode and bipolar junction transistor (BJT) for high-temperature (T > 300°C) device applications is discussed.
Journal ArticleDOI
Scaling, subthreshold, and leakage current matching characteristics in high-temperature (25 degrees C-250 degrees C) VLSI CMOS devices
TL;DR: Silicon CMOS technologies built on low-resistance epitaxial layers, combined with gold-based metallizations, are found to be the most promising among existing technologies for applications up to 250 degrees C.
References
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Journal ArticleDOI
Electrical profiling and optical activation studies of Be‐implanted GaAs
TL;DR: In this paper, differential resistivity and Hall-effect measurements have been used to study the annealing behavior and electrical carrier distribution profiles of Be-implanted GaAs, and a maximum of 90% electrical activation occurs during 900°C anneals for implanted Be concentrations less than ∼5×1018 cm−3.
Journal ArticleDOI
Extreme Temperature Range Microelectronics
D.W. Palmer,R. Heckman +1 more
TL;DR: In this article, the authors describe the development of room temperature to 300°C hybrid and printed-circuit (PC) board electronics that were developed during the last two years to meet the need for downhole geothermal instrumentation.
Journal ArticleDOI
Ion implanted GaAs bipolar transistors
TL;DR: In this paper, a GaAs n-p-n bipolar transistors were fabricated by ion implanting Be and Se into bulk n-type substrate material and they exhibited a d.c. current gain hFE ≃ 8 and a reverse bias leakage current of less than 10 nA.
Journal ArticleDOI
Ion-implanted GaAs X-band power f.e.t.s
TL;DR: In this paper, active layers for GaAs power f.t.s have been produced by Si implantation into Cr-doped substrates followed by a simple proximity-annealing technique.
Proceedings ArticleDOI
GaAs bipolar integrated circuit technology
TL;DR: In this paper, a gallium arsenide npn transistors were fabricated successfully by ion implant techniques, and the transistors showed normal current gain of 20 ∼ 25 with the substrate used as collector, and inverted current gain 5 ∼ 6 with the substrategies used as emitter.