Proceedings ArticleDOI
Finite Element Analysis of SAW Propagation Characteristics in c-plane (0001) and a-plane (11-20) AlScN Thin Films
Niclas M. Feil,Nicolas Kurz,Daniel F. Urban,Abdullah Altayara,Bjoern Christian,Anli Ding,Agne Zukauskaite,Oliver Ambacher +7 more
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TLDR
In this article, the authors investigated a-plane AlScN on rplane Al 2 O 3 (AlScN(11-20)/Al 2 O3 (1-102).Abstract:
Al 1−x Sc x N (AlScN) is known for its large elastic and piezoelectric constants and thus is a favorable material for applications in novel radio frequency (RF) components. We investigated a-plane AlScN on r-plane Al 2 O 3 (AlScN(11-20)/Al 2 O 3 (1-102)). The surface acoustic wave (SAW) propagation properties of AlScN(11-20)/Al 2 O 3 (1-102) and AlScN(11-20)/Al 2 O 3 (1-102) were analyzed using finite element method (FEM) simulations and the results were compared. Rayleigh-type and Sezawa-type wave modes were identified and the acoustic parameters such as phase velocity, electromechanical coupling coefficient, and reflectivity were evaluated. An increased effective coupling of 5.5 % was detected for Rayleigh-type waves on AlScN(11-20)/Al 2 O 3 (1-102). The Sezawa-type modes show an even higher coupling up to 6.2 %. Furthermore, we detected increased reflectivity of AlScN(11-20) films compared to c-plane AlScN(0001). Our results reveal the potential of using a-plane AlScN for increasing the electromechanical coupling, which is needed for the upcoming piezo-acoustic filter requirements.read more
Citations
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Journal ArticleDOI
Low loss surface acoustic wave SAW devices based on Al1-xMxN (M=Cr, Y, Sc) thin films
TL;DR: In this paper, the coupling-of-modes (COM) approach and P-matrix model were used to investigate the frequency response of a two-port surface acoustic wave SAW delay line based on piezoelectric AlN doped with transition metals.
Journal ArticleDOI
Temperature Performance Study of SAW Sensors Based on AlN and AlScN
Linwei Zhang,Lianghua Lou +1 more
TL;DR: In this paper , the temperature performance of the AlN-SAW resonator and the AlScN-SWA resonator was analyzed by COMSOL multiphysics, and their modes and the S11 curve were analyzed.
Journal ArticleDOI
AlN/Sapphire-Based SAW Resonators With Q Over 10000 for Temperature Sensors
TL;DR: In this paper , a surface acoustic wave (SAW) resonator with quality factors has been fabricated on thick metalorganic chemical vapor deposition (MOCVD)-grown (0002) aluminum nitride (AlN) films.
Proceedings ArticleDOI
Non-Polar a-plane AlScN($11\overline{2}0$) Thin Film Based SAW Resonators with Significantly Improved Electromechanical Coupling
Anli Ding,Rachid Driad,Yuan Lu,Niclas M. Feil,Lutz Kirste,Tim Christoph,Oliver Ambacher,Agne Zukauskaite +7 more
TL;DR: In this article, the authors used magnetron sputter epitaxy on r-plane Al2O3( $1\overline{2}02$ ) substrates.
Proceedings ArticleDOI
High Electromechanical Coupling SAW Resonators Based on a-Plane AlScN-AlN-Sapphire Substrate
TL;DR: In this article , surface acoustic wave (SAW) piezoelectric resonators with high electromechanical coupling coefficient (k http://www.w3.org/1999/xlink">eff were evaluated.
References
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Book
Acoustic Fields and Waves in Solids
TL;DR: In this article, the authors apply the material developed in the Volume One to various boundary value problems (reflection and refraction at plane surfaces, composite media, waveguides and resonators).
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Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN
TL;DR: In this article, the elastic constants for zinc-blende and wurtzite were obtained from density-functional-theory calculations utilizing ab initio pseudopotentials and plane-wave expansions.
Journal ArticleDOI
Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering
Morito Akiyama,Toshihiro Kamohara,Kazuhiko Kano,Akihiko Teshigahara,Yukihiro Takeuchi,Nobuaki Kawahara +5 more
TL;DR: This communication reports a hightemperature piezoelectric material that exhibits a good balance between high maximum use temperature and large piez Zoelectricity, achieved by the combination of the discovery of a phase transition in scandium aluminum nitride (ScxAl1 xN) alloy thin films and the use of dual co-sputtering, which leads to nonequilibrium alloy thin Films.
Journal ArticleDOI
Piezoelectric aluminum nitride thin films for microelectromechanical systems
TL;DR: In this paper, the state-of-the-art of the development of aluminum nitride (AlN) thin-film microelectromechanical systems (MEMS) with particular emphasis on acoustic devices for radio frequency (RF) signal processing.