Proceedings ArticleDOI
Fractal structures for low-resistance large area AlGaN/GaN power transistors
Richard Reiner,Patrick Waltereit,Fouad Benkhelifa,Stefan Müller,H. Walcher,Sandrine Wagner,Rudiger Quay,Michael Schlechtweg,Oliver Ambacher +8 more
- pp 341-344
Reads0
Chats0
TLDR
In this paper, a new design approach for the use of fractal structures for low-resistance large area transistors structures is introduced, which achieves a breakdown voltage of V BR > 700V and onstate currents of I D = 40A at V GS = 1V.Abstract:
This work introduces a new design approach for the use of fractal structures for low-resistance large area transistors structures. Aspects of layout with adapted current density and high-area utilization are considered. Furthermore the work presents a realization of fractal structures in AlGaN/GaN technology. Both static and dynamic behaviors are characterized. The fabricated devices achieve a breakdown voltage of V BR > 700V and on-state currents of I D = 40A at V GS = 1V.read more
Citations
More filters
Journal ArticleDOI
Assembly and Packaging Technologies for High-Temperature and High-Power GaN Devices
TL;DR: In this article, a detailed analysis on the assembly and packaging technologies for the state-of-the-art GaN-based high-electron-mobility transistors, which are suitable for high-temperature and high-power applications, is given.
Proceedings ArticleDOI
Techniques towards GaN power transistors with improved high voltage dynamic switching properties
Joachim Würfl,Oliver Hilt,Eldad Bahat-Treidel,R. Zhytnytska,P. Kotara,Frank Brunner,O. Krueger,Markus Weyers +7 more
TL;DR: In this paper, the dynamic switching limitations of GaN power devices are analyzed and techniques towards improving fast high voltage switching are proposed and verified experimentally with an emphasis on optimized epitaxial buffer designs.
Journal ArticleDOI
GaN HEMTs and MMICs for space applications
Patrick Waltereit,Wolfgang Bronner,Rudiger Quay,Michael Dammann,M. Casar,Stefan Müller,Richard Reiner,Peter Brückner,Rudolf Kiefer,F. van Raay,Jutta Kuhn,M. Musser,C. Haupt,Michael Mikulla,Oliver Ambacher +14 more
TL;DR: In this article, the authors report on recent results from their GaN transistor and circuit technology, which is characterized by state-of-theart performance, good uniformity and high yield as well as excellent long-term stability.
Dissertation
Living Trees and Networks: An Exploration of Fractal Ontology and Digital Archiving of Indigenous Knowledge
CA Reid,Chelsea Bourget +1 more
TL;DR: In this article, Bourget analyzes the digital network as a fractal form of establishing connections, and suggests that fractal ontology is an extension of Akinoomaagewin (physical philosophy) that describes Indigenous arts and culture archives in the digital age that crosses the humanities and sciences, and foregrounds systems theory.
Proceedings ArticleDOI
Physical modeling and optimization of a GaN HEMT design with a field plate structure for high frequency application
D. Cucak,Miroslav Vasic,O. Garcia,Y. E. Bouvier,Jesus A. Oliver,Pedro Alou,Jose A. Cobos,Ashu Wang,S. Martin-Horcajo,F. Romero,Fernando Calle +10 more
TL;DR: In this article, a physical modeling of a GaN HEMT with a field plate structure is proposed, with the objective of providing the connection between the physical design parameters of the device (geometry, Al mole fraction, type of the field plate, etc) and on-resistance together with parasitic capacitances of the devices.
References
More filters
Journal ArticleDOI
The Fractal Geometry of Nature
TL;DR: A blend of erudition (fascinating and sometimes obscure historical minutiae abound), popularization (mathematical rigor is relegated to appendices) and exposition (the reader need have little knowledge of the fields involved) is presented in this article.
Journal ArticleDOI
GaN Power Transistors on Si Substrates for Switching Applications
Nariaki Ikeda,Yuki Niiyama,Hiroshi Kambayashi,Yoshihiro Sato,Takehiko Nomura,Sadahiro Kato,Seikoh Yoshida +6 more
TL;DR: In this article, GaN power transistors on Si substrates for power switching application are reported, and current collapse phenomena are discussed for GaN-HFETs on Si substrate, resulting in suppression of the current collapse due to using the conducting Si substrate.
GaN Power Transistors on Si Substrates for Switching Applications Hybrid MOS-FET transistor devices with low on-resistance, high hold-voltages and high breakdown voltage promise to provide high-power, low-loss operation for switching applications.
Nariaki Ikeda,Yuki Niiyama,Hiroshi Kambayashi,Yoshihiro Sato,Takehiko Nomura,Sadahiro Kato,Seikoh Yoshida +6 more
TL;DR: A hybrid metal-oxide-semiconductor HFET structure is a promising candidate for obtaining devices with a lower on-resistance and a high breakdown voltage as well as one of the cost-effective solutions.
GaN-Based Power Transistors for Future Power Electronic Converters
TL;DR: In this article, a hard switching boost converter was constructed using E-mode GaN DHFET prototypes on silicon, achieving a high conversion efficiency of 96% (Pout = 106 W, 76 to 142 V at 512 kHz).
Proceedings Article
Simulation and analysis of low-resistance AlGaN/GaN HFET power switches
TL;DR: In this article, the main parameters affecting the on-state resistance and influence of resistive metallization in lateral finger structures and large-area comb structures are analyzed and compared.
Related Papers (5)
Nonlinear Electrothermal GaN HEMT Model Applied to High-Efficiency Power Amplifier Design
Justin B. King,Thomas J. Brazil +1 more