Proceedings ArticleDOI
From 3D thermal simulation of HBT devices to their thermal model integration into circuit simulators via Ritz vectors reduction technique
Raphaël Sommet,D. Lopez,Raymond Quéré +2 more
- pp 22-28
TLDR
In this paper, a reduced thermal model based on a three-dimensional finite element (FE) thermal simulation was integrated into circuit simulator for an accurate prediction of the electrothermal behavior of power devices.Abstract:
As the size of the semiconductor devices is getting smaller and as the power density is getting higher with advanced technology, self-heating effects in power devices are becoming important. Electrothermal models of whole power devices are necessary for an accurate analysis of their performances. This paper deals with the integration of a reduced thermal model based on a three-dimensional finite element (FE) thermal simulation into circuit simulator for an accurate prediction of the electrothermal behavior of power devices. The reduced thermal model based on the Ritz vectors approach can be easily implemented in any kind of circuit simulator because it is described by a SPICE format subcircuit. The model has been successfully experimented with the Advanced Design Simulator (ADS). Electrical based thermal measurements of transient temperature response have successfully validated the approach. Coupled to a distributed electrical model, this electrothermal model has been used in order to simulate the instability phenomenon known as "the current collapse phenomenon" which can occur in multi-finger heterojunction bipolar transistors (HBTs).read more
Citations
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Journal ArticleDOI
Self-Consistent Electrothermal Modeling of Class A, AB, and B Power GaN HEMTs Under Modulated RF Excitation
TL;DR: In this paper, the authors presented an accurate and flexible approach to the self-consistent electrothermal modeling of III-N-based HEMTs, combining a temperature-dependent electrical compact model with a novel behavioral nonlinear dynamic thermal model, suitable for circuit-level simulations.
Journal ArticleDOI
Behavioral Thermal Modeling for Microwave Power Amplifier Design
TL;DR: In this paper, the authors present a new electrothermal behavioral model for power amplifiers based on the coupling between a behavioral electrical model derived from the transistor-level description of the amplifier and a thermal reduced model.
Journal ArticleDOI
Thermal Transient Response of GaAs FETs Under Intentional Electromagnetic Interference (IEMI)
TL;DR: In this article, the transient thermal responses of GaAs field-effect transistors (FETs) in the presence of an electromagnetic pulse (EMP) are investigated, and the numerical methodology employed is an efficient nonlinear finite-element method (FEM) that combines the element-by-element FEM and the preconditioned conjugate gradient technique.
Proceedings ArticleDOI
A Scalable and Distributed Electro-Thermal Model of AlGaN/GaN HEMT Dedicated to Multi-Fingers Transistors
TL;DR: In this paper, a scalable and distributed electrothermal model of AlGaN/GaN HEMT was developed for multi-fingers and large periphery transistors, which was especially developed for multiuser transistors.
Proceedings ArticleDOI
Nonlinear Thermal Reduced Model for Power Semiconductor Devices
TL;DR: In this paper, a model order reduction technique applied to a three dimensional finite element thermal description is proposed to obtain a precise nonlinear thermal model which can be implemented as an equivalent SPICE (simulation program integrated circuits especially) subcircuit in circuit simulators.
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Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densities
TL;DR: In this paper, the authors address a thermal phenomenon observed when a multifinger power HBT is operating at high power densities, referred to as the collapse (of current gain), occurs when suddenly one finger of the HBT draws most of the collector current, leading to an abrupt decrease of current gain.
Journal ArticleDOI
The collapse of current gain in multi-finger heterojunction bipolar transistors: its substrate temperature dependence, instability criteria, and modeling
Wen-Chau Liu,A. Khatibzadeh +1 more
TL;DR: In this article, a unified equation is introduced to relate the collapse instability criterion with other thermal instability criteria proposed for silicon bipolar transistors, and the effects of the thermal instability on the collapse behavior of 2-finger and 1-finger HBT's are examined.