Journal ArticleDOI
Gaas Pn Junction Studied by Scanning Tunneling Potentiometry
Reads0
Chats0
TLDR
In this paper, the potential distribution across the cleaved end face of a forward-biased GaAs pn junction was simultaneously mapped with its surface topography, and the space charge region along the interface was clearly visible at zero bias or small forward bias voltages.Abstract:
The potential distribution across the cleaved end face of a forward‐biased GaAs pn junction was simultaneously mapped with its surface topography. The space‐charge region along the interface is clearly visible at zero bias or small forward bias voltages.read more
Citations
More filters
Book
Ultimate Computing: Biomolecular Consciousness and NanoTechnology
TL;DR: The Origin and Evolution of Life, From Brain to Cytoskeleton, and the Future of Consciousness: Towards Ultimate Computing.
Journal ArticleDOI
Electronic transport at semiconductor surfaces--from point-contact transistor to micro-four-point probes
Shuji Hasegawa,Francois Grey +1 more
TL;DR: In this article, the conduction of electrons or holes directly through the surface states of semiconductor surfaces has been studied, and it is shown that this type of conduction is measurable using new types of experimental probes, such as the multi-tip scanning tunnelling microscope and the micro-four-point probe.
Journal ArticleDOI
Cross‐sectional imaging and spectroscopy of GaAs doping superlattices by scanning tunneling microscopy
Randall M. Feenstra,Edward T. Yu,Jerry M. Woodall,Peter D. Kirchner,C. L. Lin,George David Pettit +5 more
TL;DR: In this article, the scanning tunneling microscope is used to image GaAs pn-doping superlattices, cleaved in ultrahigh vacuum, and currentvoltage measurements provide a detailed view of the variation in Fermi-level position across the super-lattice.
Journal ArticleDOI
Scanning tunneling microscopy and potentiometry on a semiconductor heterojunction
TL;DR: In this article, the potential distribution across the cleaved end face of a forward-biased GaAs double heterojunction laser diode was mapped using scanning tunneling potentiometry.
Journal ArticleDOI
Delineation of semiconductor doping by scanning resistance microscopy
TL;DR: In this paper, a technique for the two-dimensional delineation of P•N junctions using a scanning resistance microscope (SRM) is presented. But the technique is limited to a lateral spacial resolution of less than 35 nm.
References
More filters
Journal ArticleDOI
Surface studies by scanning tunneling microscopy
TL;DR: In this paper, surface microscopy using vacuum tunneling has been demonstrated for the first time, and topographic pictures of surfaces on an atomic scale have been obtained for CaIrSn 4 and Au.
Journal ArticleDOI
Tunneling through a controllable vacuum gap
TL;DR: In this article, the first successful tunneling experiment with an externally and reproducibly adjustable vacuum gap is reported, based on the exponential dependence of the tunneling resistance on the width of the gap.
Journal ArticleDOI
Mono-atomic tips for scanning tunneling microscopy
TL;DR: By field-ion microscopy techniques, stable tips whose very ends are made up of just one individual atom are created, deposited from the gas phase onto an upper terrace of a pyramidal (111)-oriented tungsten tip.
Journal ArticleDOI
Scanning tunneling microscope combined with a scanning electron microscope
TL;DR: In this paper, a small scanning tunneling microscope (STM) is incorporated into a scanning electron microscope (SEM) to achieve tunnel-gap stability of about 1 A at atmospheric air pressure without additional sound protection.
Journal ArticleDOI
Scanning tunneling potentiometry
Paul Muralt,Dieter W. Pohl +1 more
TL;DR: In this article, the potential distribution with microscopic resolution at interfaces (Schottky barriers) or pn junctions is obtained by scanning tunneling potentiometry, which is used for simultaneously sensing probe-to-sample distance and local potential.