Journal ArticleDOI
GaP-AlGaP heterojunction photosensors with photosensitivity maximum at 380–420 nm
Reads0
Chats0
TLDR
In this article, the growth and spectral characteristics of p-AlGaP, pGaP/n-GaP heterostructures photosensors grown by the LPE method were studied.About:
This article is published in Solar Energy Materials and Solar Cells.The article was published on 1995-07-01. It has received 8 citations till now. The article focuses on the topics: Photodetector & Light emission.read more
Citations
More filters
Journal ArticleDOI
Wide Band Gap Gallium Phosphide Solar Cells
Xuesong Lu,Susan R. Huang,Martin Diaz,Nicole A. Kotulak,Ruiying Hao,Robert L. Opila,Allen Barnett +6 more
TL;DR: In this paper, four generations of GaP solar cells are developed and fabricated with each solar cell structure being designed and improved based on the first principles analyses of the predecessor solar cells.
Journal ArticleDOI
Heterojunction and superlattice detectors for infrared to ultraviolet
TL;DR: In this paper, the authors used a well-studied III-V system of GaAs/Al x Ga 1 - x As to cover a wide wavelength range from UV to far-infrared (THz) using the intervalence band (heavy hole, light hole, and split off) transitions.
Journal ArticleDOI
Improving GaP Solar Cell Performance by Passivating the Surface Using AlxGa1-xP Epi-Layer
TL;DR: In this article, the front surface of a GaP solar cell with an AlGaP layer was passivated with liquid phase epitaxial layer and X-ray diffraction results showed an 18% increase in current due to the alGaP.
Book ChapterDOI
Homo- and Heterojunction Interfacial Workfunction Internal Photo-Emission Detectors from UV to IR
TL;DR: In this article, the authors focus on detection using internal photoemission across an interfacial workfunction in a semiconductor homo- or heterojunction architecture, and discuss the way multiband detection is achieved in a single detector element.
Journal ArticleDOI
Studying structural, electronic and optical properties of zinc-blende Ga1−x Al x P at normal and under pressure by means of first principle
R. Moussa,A. Abdiche,Rabah Khenata,D. P. Rai,Waleed K. Ahmed,S. Bin Omran,G. Murtaza,F. Soyalp +7 more
TL;DR: In this paper, structural, electronic and optical properties of the zinc-blende Ga1−x Al x P ternary alloys with their ordered AlP and GaP binary compounds have been investigated, using the full potential linearized augmented plane wave method in conjunction with the density functional theory.
References
More filters
Journal ArticleDOI
Gallium phosphide junctions with low leakage for energy conversion and near ultraviolet detectors
TL;DR: In this paper, the Schottky barrier of Pd on liquid phase epitaxy grown n-type GaP and a p+ over n junction grown by metalorganic chemical vapor deposition were reported.
Journal ArticleDOI
Observation of E0 and E1 transitions in AlGaP alloys by electrolyte electroreflectance
TL;DR: In this paper, the optical properties of AlxGa1−xP alloys of various compositions have been investigated by electrolyte electroreflectance, and the E0 and E1 optical transitions have been observed for the first time in the spectral region between 3000 and 4500 A.
Related Papers (5)
High performance uncooled InAsSbP/InGaAs photodiodes for the 1.8–3.4 μm wavelength range
Anthony Krier,Y. Mao +1 more
Microcavity plasma photodetectors: Photosensitivity, dynamic range, and the plasma-semiconductor interface
N. P. Ostrom,James Gary Eden +1 more