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Journal ArticleDOI

Growth of β-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers

TLDR
A detailed study of the formation of β-FeSi2 films by ion-beam mixing of Fe/Si bilayers with noble gas ions is presented in this paper, where the structures were analyzed by Rutherford backscattering spectroscopy, x-ray diffraction, conversion electron Mossbauer spectrograph, elastic recoil detection analysis, cross-section high resolution transmission electron microscopy, and energy dispersive x-rays spectroscope.
Abstract
A detailed study of the formation of β-FeSi2 films by ion-beam mixing of Fe/Si bilayers with noble gas ions is presented. Fe films of 35–50 nm deposited on Si (100) were irradiated with 80–700 keV Ar, Kr, or Xe ions in a wide temperature interval, from room temperature to 600 °C. The structures were analyzed by Rutherford backscattering spectroscopy, x-ray diffraction, conversion electron Mossbauer spectroscopy, elastic recoil detection analysis, cross-section high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. Already after Xe irradiation at 300 °C the whole Fe layer is transformed to a mixture of Fe3Si, e-FeSi, and β-FeSi2 phases. At 400–450 °C, a unique, layer by layer growth of β-FeSi2 starting from the surface was found. A full transformation of 35 nm Fe on Si to a 105 nm β-FeSi2 layer was achieved by irradiation with 205 keV Xe to 2×1016 ions/cm2, at a temperature of 600 °C. The fully ion-beam grown layers exhibit a pronounced surface roughness, but a sharp in...

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Citations
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Journal ArticleDOI

Swift ion irradiations of natFe/57Fe/Si trilayers

TL;DR: In this article, the authors report changes in magnetism and microstructure when implanting, at 92 or 300 K, up to 5 x 10 15 Au 26+ -ions cm -2 of 350 MeV into nat Fe(45 nm)/ 57 Fe(20 nm)/Si trilayers.
Journal ArticleDOI

The effect of Mn and Al dopants on the β-FeSi2 stabilization by a two-step route: Mechanical alloying and annealing

TL;DR: Al and Mn dopant influence on β-FeSi 2 phase formation was studied using X-ray diffraction and Mossbauer spectroscopy in this paper, which indicated that the addition of Al improved the stabilization of β -FeSi2 phase, reducing the amount of ǫ −FeSi from 20% to 6%.
Journal ArticleDOI

Structural and optical properties of β-FeSi2 layers grown by ion beam mixing

TL;DR: In this paper, structural and optical properties of β-FeSi 2 layers produced by direct ion beam mixing of Fe/Si bilayers with Xe ions were analyzed by using Rutherford backscattering spectroscopy, X-ray diffraction, conversion electron Mossbauer spectrography, high resolution transmission electron microscopy, and photo-absorption.
Journal ArticleDOI

Controllable growth of α- and β-FeSi2 thin films on Si(100) by facing-target sputtering

TL;DR: In this article, the role of the buffer layer on the formation of β- and α-FeSi2 thin film was discussed, and the composition of the β-Si2 film can be tuned from Fe enrichment to Si enrichment by altering the radio-frequency input power applied on the Si or/and Fe target.
Journal ArticleDOI

Mössbauer and magnetic study of interface structure of Fe/SixFe1−x multilayers with antiferromagnetic interlayer coupling

TL;DR: In this paper, the structural and magnetic properties of Fe/Si x Fe 1−x multilayers have been studied by the conversion electron Mossbauer spectroscopy (CEMS) and magnetic measurements.
References
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Book

The stopping and range of ions in solids

TL;DR: A review of existing widely-cited tables of ion stopping and ranges can be found in this paper, where a brief exposition of what can be determined by modern calculations is given.
Journal ArticleDOI

Algorithms for the rapid simulation of Rutherford backscattering spectra

TL;DR: Estimates of the number of arithmetic operations used by the program for any simulation to demonstrate the tradeoffs between accuracy, computation time, and algorithm sophistication are provided.
Journal ArticleDOI

A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm

TL;DR: In this article, a light-emitting device operating at 1.5 µm was presented that incorporates β-FeSi2 into a conventional silicon bipolar junction, which demonstrates the potential of this material as an important candidate for a silicon-based optoelectronic technology.
Journal ArticleDOI

Optical properties of semiconducting iron disilicide thin films

TL;DR: In this article, X-ray diffraction indicates the films are single-phase, orthorhombic, β-FeSi2, and single-crystal silicon wafers and with low pressure chemical vapor deposition (LPCVD) polycrystalline silicon thin films.
Journal ArticleDOI

Energy calibration of the 500 kV heavy ion implanter ionas

TL;DR: In this paper, the gamma ray yield function of (p, αγ) and resonance reactions on semi-thick 19F, 23Na, 24,26Mg and 27Al targets were measured and used to calibrate the accelerating voltage and energy resolution of the new 500 kV heavy ion implanter at Gottingen.
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