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Hall mobility and carrier repopulation of n-type silicon at high electric fields
B. R. Nag,H. Paria,P.K. Basu +2 more
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TLDR
In this article, conductivity and Hall mobility characteristics of 5 ohm-cm n-type Si at room temperature for electric fields upto 10 kV/cm applied along the 〈111〉 and ͡100〉 directions are presented.About:
This article is published in Physics Letters A.The article was published on 1968-11-18. It has received 6 citations till now. The article focuses on the topics: Electric field & Population.read more
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Carrier repopulation from plasma frequency measurement in many-valley semiconductors under high-field condition
TL;DR: In this paper, the carrier population in many-valley semiconductors has been calculated under high field conditions, and it is observed that the carrier populations in the different valleys can be obtained from a measurement of the plasma frequency under high-field condition.
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Journal ArticleDOI
Conductivity anisotropy and hot electron temperature in silicon
TL;DR: In this article, measurements of the hot electron conductivity anisotropy (Shibuya-Sasaki effect) in silicon have been made at lattice temperatures of 77°K and 300°K for specimens with impurity concentrations from 1.8 × 10 14 cm −3 to 8.5 × l0 15 cm−3.
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Conductivity anisotropy of n -type silicon in the range of warm and hot carriers
TL;DR: The electric conductivity of n-type silicon was measured as a function of the field intensity in different crystallographic directions at temperatures between 78 and 275 °K as mentioned in this paper and the coefficients of Schmidt-Tiedemann's anisotropy theory were determined.
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Longitudinal Magnetoresistance and Hall Mobility of n‐Type Germanium at High Electric Fields
B. R. Nag,H. Paria,S. Guha +2 more
TL;DR: In this article, the longitudinal magnetoresistance and Hall mobility of 5-Ω·cm n-type germanium have been measured for electric fields applied in the (111) direction up to 4 kV/cm.