Heating-frequency-dependent thermal conductivity: An analytical solution from diffusive to ballistic regime and its relevance to phonon scattering measurements
Fan Yang,Chris Dames +1 more
TLDR
In this article, the heating-frequency dependence of the apparent thermal conductivity in a semi-infinite body with periodic planar surface heating is explained by an analytical solution to the Boltzmann transport equation.Abstract:
The heating-frequency dependence of the apparent thermal conductivity in a semi-infinite body with periodic planar surface heating is explained by an analytical solution to the Boltzmann transport equation. This solution is obtained using a two-flux model and gray mean free time approximation and verified numerically with a lattice Boltzmann method and numerical results from the literature. Extending the gray solution to the nongray regime leads to an integral transform and accumulation-function representation of the phonon scattering spectrum, where the natural variable is mean free time rather than mean free path, as often used in previous work. The derivation leads to an approximate cutoff conduction similar in spirit to that of Koh and Cahill [Phys. Rev. B 76, 075207 (2007)] except that the most appropriate criterion involves the heater frequency rather than thermal diffusion length. The nongray calculations are consistent with Koh and Cahill's experimental observation that the apparent thermal conductivity shows a stronger heater-frequency dependence in a SiGe alloy than in natural Si. Finally these results are demonstrated using a virtual experiment, which fits the phase lag between surface temperature and heat flux to obtain the apparent thermal conductivity and accumulation function.read more
Citations
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Direct Measurement of Room-Temperature Nondiffusive Thermal Transport Over Micron Distances in a Silicon Membrane
Jeremy A. Johnson,Alexei Maznev,J. Cuffe,J. Cuffe,Jeffrey K. Eliason,Austin J. Minnich,Timothy Kehoe,Clivia M. Sotomayor Torres,Clivia M. Sotomayor Torres,Gang Chen,Keith A. Nelson +10 more
TL;DR: In this paper, a simple experiment demonstrating that room-temperature thermal transport in Si significantly deviates from the diffusion model already at micron distances is presented, indicating a transition from the diffusive to the ballistic transport regime for the low-frequency part of the phonon spectrum.
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Tutorial: Time-domain thermoreflectance (TDTR) for thermal property characterization of bulk and thin film materials
TL;DR: In this article, the authors discuss the basics of the ultrafast laser-based time-domain thermoreflectance (TDTR) technique and its applications in the thermal characterization of a variety of materials.
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Probing Anisotropic Thermal Conductivity of Transition Metal Dichalcogenides MX2 (M = Mo, W and X = S, Se) using Time‐Domain Thermoreflectance
TL;DR: A variable-spot-size time-domain thermoreflectance approach is developed to simultaneously measure both the in-plane and the through-plane thermal conductivity of four kinds of layered TMDs over a wide temperature range, 80-300 K, and it is found that both theThrough-plane Thermal conductivity and the Al/TMD interface conductance depend on the modulation frequency of the pump beam for all these four compounds.
Journal ArticleDOI
Tutorial: Time-domain thermoreflectance (TDTR) for thermal property characterization of bulk and thin film materials
TL;DR: In this paper, the authors discuss the basics of the ultrafast laser-based time-domain thermoreflectance (TDTR) technique and its applications in thermal characterization of a variety of materials.
Journal ArticleDOI
Time-domain thermoreflectance (TDTR) measurements of anisotropic thermal conductivity using a variable spot size approach.
TL;DR: This work extends the time-domain thermoreflectance method with a variable spot size approach to simultaneously measure the in-plane and the through-plane thermal conductivity of materials with strong anisotropy, and establishes a criterion for the range of thermal Conductivity that can be measured reliably using the proposed variable spotsize TDTR approach.
References
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Thin-film thermoelectric devices with high room-temperature figures of merit
TL;DR: Th thin-film thermoelectric materials are reported that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys, and the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications.
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High Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys.
Bed Poudel,Qing Hao,Yi Ma,Austin J. Minnich,Andrew Muto,Yucheng Lan,Bo Yu,Xiao Yan,Dezhi Wang,Daryoosh Vashaee,X.Y. Chen,Dresselhaus,Gang Chen,Zhifeng Ren +13 more
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Journal Article
Enhanced Thermoelectric Performance in Rough Silicon Nanowires
Renkun Chen,Allon I. Hochbaum,Raul Diaz Delgado,Wenjie Liang,Erik C. Garnett,Mark Najarian,Arun Majumdar,Peidong Yang +7 more
TL;DR: Electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20–300 nm in diameter show promise as high-performance, scalable thermoelectric materials.
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