Journal ArticleDOI
High-Frequency Integrated Point-of-Load Converters: Overview
Fred C. Lee,Qiang Li +1 more
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TLDR
Three-dimensional integration, which uses magnetic component as a substrate, is one of the promising integration methods and the power density of the latest 20-A 5-MHz 3-D integrated POL converter is demonstrated as high as 1100 W/in3, which is a factor of 10 improvements compared to industry products at the same current level.Abstract:
This overview paper focuses on state-of-the-art technologies and trends toward the integration of point-of-load (POL) converters. This paper encompasses an extended survey of literature ranging from device technologies and magnetic materials to integration technologies and approaches. This paper is organized into three main sections. 1) Device technologies, including the trench MOSFET, lateral MOSFET, and gallium nitride (GaN) high electron mobility transistor, are discussed along with their intended applications. The critical role of device packaging to highfrequency integration is also assessed. 2) Magnetic materials: In recent years, a number of new magnetic materials have been explored to facilitate magnetic integration for high-frequency POL converters. These data are collected and organized to help selecting magnetic material for various frequency ranges. 3) Integration methods, which are defined with the focus on magnetic integration techniques and approaches. Two integration levels are classified, namely wafer level and package level. Detailed information is presented for each integration level to identify suitable current scale and frequency range. Three-dimensional integration, which uses magnetic component as a substrate, is one of the promising integration methods. By using an integrated GaN device and a low-profile low-temperature cofired ceramic inductor substrate, the power density of the latest 20-A 5-MHz 3-D integrated POL converter is demonstrated as high as 1100 W/in3, which is a factor of 10 improvements compared to industry products at the same current level.read more
Citations
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Evaluation and Application of 600 V GaN HEMT in Cascode Structure
TL;DR: In this article, the characteristics and operation principles of a 600 V cascode GaN HEMT were studied and compared with a state-of-the-art silicon MOSFET.
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Package Parasitic Inductance Extraction and Simulation Model Development for the High-Voltage Cascode GaN HEMT
TL;DR: In this paper, the authors presented a simulation model for high-voltage gallium nitride (GaN) high-electron-mobility transistors (HEMT) in a cascode structure.
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Analytical Loss Model of High Voltage GaN HEMT in Cascode Configuration
TL;DR: In this article, the authors presented an accurate analytical model to calculate the power loss of a high voltage Gallium Nitride high electron mobility transistor (GaN HEMT) in cascode configuration.
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Pulse Density Modulation for Maximum Efficiency Point Tracking of Wireless Power Transfer Systems
TL;DR: In this paper, a pulse density modulation (PDM) based implementation for maximum efficiency point tracking (MEPT) was proposed to eliminate all the mentioned disadvantages of existing MEPT implementations.
Proceedings ArticleDOI
Analytical loss model of high voltage GaN HEMT in cascode configuration
TL;DR: In this paper, the authors presented an accurate analytical model to calculate the power loss of a high voltage Gallium Nitride high electron mobility transistor (GaN HEMT) in cascode configuration.
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Joshua Wibben,Ramesh Harjani +1 more
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Proceedings Article
A High-Efficiency DC-DC Converter Using 2 nH Integrated Inductors
Joshua Wibben,Ramesh Harjani +1 more
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