Journal ArticleDOI
AlGaN/GaN HEMTs-an overview of device operation and applications
Umesh K. Mishra,P. Parikh,Yifeng Wu +2 more
- Vol. 90, Iss: 6, pp 1022-1031
TLDR
This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems of the AlGaN/GaN high-electron mobility transistor.Abstract:
Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.read more
Citations
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PatentDOI
Stretchable form of single crystal silicon for high performance electronics on rubber substrates
TL;DR: In this article, the authors present stretchable and printable semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed, or otherwise deformed.
Journal ArticleDOI
GaN-Based RF Power Devices and Amplifiers
TL;DR: The latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, are reviewed to achieve the state-of-the-art microwave and millimeter-wave performance.
PatentDOI
Pattern Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp
Ralph G. Nuzzo,John A. Rogers,Etienne Menard,Keon Jae Lee,Dahl-Young Khang,Yugang Sun,Matthew Meitl,Zhengtao Zhu +7 more
TL;DR: In this article, the authors present methods, systems and system components for transferring, assembling and integrating features and arrays of features having selected nanosized and/or microsized physical dimensions, shapes and spatial orientations.
PatentDOI
Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates
TL;DR: In this paper, a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, is used to provide a semiconductor channel exhibiting improved electronic properties relative to conventional nanotube-based electronic systems.
Patent
Methods and devices for fabricating and assembling printable semiconductor elements
Ralph G. Nuzzo,John A. Rogers,Etienne Menard,Keon Jae Lee,Dahl-Young Khang,Yugang Sun,Matthew Meitl,Zhengtao Zhu +7 more
TL;DR: In this article, the authors present methods and devices for fabricating printable semiconductor elements and assembling them onto substrate surfaces, which are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on polymeric materials.
References
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Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
TL;DR: In this article, the growth condition dependence of crystalline quality is also studied, and the narrowest x-ray rocking curve from the (0006) plane is 2.70' and from the 2024 plane is 1.86' on sapphire substrates.
Journal ArticleDOI
Gan : processing, defects, and devices
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Journal ArticleDOI
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
TL;DR: In this article, the authors show that the cause of current collapse is a charging up of a second virtual gate, physically located in the gate drain access region, thus acting as a negatively charged virtual gate.
Journal ArticleDOI
Very-high power density AlGaN/GaN HEMTs
TL;DR: A flip-chip amplifier IC using a 4-mm device generated 14 W at 8 GHz, representing the highest CW power obtained from GaN-based integrated circuits to date.