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Journal ArticleDOI

High‐speed measurement of the response time of a GaAs/AlxGa1−xAs multiquantum‐well long‐wavelength infrared detector

C. G. Bethea, +4 more
- 15 Jul 1989 - 
- Vol. 66, Iss: 2, pp 963-965
TLDR
In this paper, the response time of a GaAs/Alx Ga1−x As multiquantum well infrared detector (at a wavelength of λ=6.4 μm) was determined to be less than 300 ps.
Abstract
We have measured the response time of a GaAs/Alx Ga1−x As multiquantum well infrared detector (at a wavelength of λ=6.4 μm). The intrinsic rise time is determined to be less than 300 ps.

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Citations
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Journal ArticleDOI

Recent progress in quantum cascade lasers and applications

TL;DR: In this article, a detailed review of the performance of quantum cascade (QC) laser can be found, where the inter-subband transition is characterized through ultrafast carrier dynamics and the absence of the linewidth enhancement factor, with both features expected to have significant impact on laser performance.
Journal ArticleDOI

High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors

TL;DR: In this article, a GaAs quantum well infrared detector having a cutoff wavelength of λc=10.7 μm was used to achieve a blackbody detectivity of 1.0×1010 cm (Hz) 1/2/W at T=68 K, a temperature which is readily achievable with a cryogenic cooler.
Journal ArticleDOI

Broadband 8–12 μm high‐sensitivity GaAs quantum well infrared photodetector

TL;DR: In this article, the first high-detectivity bound state to extended state quantum well detectors which are peaked at λ = 10 μm was achieved. But the spectral bandwidth (Δν/ν) of these devices is three times larger than their earlier λ=8 μm device and the detectivity D* is background limited at T=50 K with D*=1×1010 cm (Hz)1/2 /W, and a noise equivalent temperature change of NEΔT=0.01 K.
Journal ArticleDOI

10- mu m GaAs/AlGaAs multiquantum well scanned array infrared imaging camera

TL;DR: In this article, a long-wavelength infrared imaging camera that uses a GaAs/Al/sub x/Ga/sub 1-x/As quantum-well infrared photodetector (QWIP) array is demonstrated.
References
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Journal ArticleDOI

First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well

TL;DR: In this paper, a dipole occurs between two envelope states of the conduction-band electron wave function, and is called a quantum well envelope state transition (QWEST).
Journal ArticleDOI

New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices

TL;DR: In this article, a 10.8 μm superlattice infrared detector based on doped quantum wells of GaAs/AlGaAs was proposed, which achieved a narrow bandwidth (10%) photosensitivity with a responsivity of 0.52 A/W and an estimated speed of 30 ps.
Journal ArticleDOI

Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides

TL;DR: In this article, the infrared intersubband absorption at 8.2 μm in doped GaAs/AlAs quantum well superlattices was measured, with 95% of the incident infrared energy being absorbed.
Journal ArticleDOI

Observation of Stark shifts in quantum well intersubband transitions

TL;DR: In this article, the authors observed Stark shifts of quantum well intersubband transitions in a perpendicular electric field and applied these tunable transitions to high-speed infrared light modulators.
Journal ArticleDOI

New mode of IR detection using quantum wells

TL;DR: In this paper, a new mode of IR detection using photoemission from a single quantum well is proposed and optimization of the device performance by the proper choice of parameters is discussed.
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