Journal ArticleDOI
High‐speed measurement of the response time of a GaAs/AlxGa1−xAs multiquantum‐well long‐wavelength infrared detector
TLDR
In this paper, the response time of a GaAs/Alx Ga1−x As multiquantum well infrared detector (at a wavelength of λ=6.4 μm) was determined to be less than 300 ps.Abstract:
We have measured the response time of a GaAs/Alx Ga1−x As multiquantum well infrared detector (at a wavelength of λ=6.4 μm). The intrinsic rise time is determined to be less than 300 ps.read more
Citations
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Journal ArticleDOI
Recent progress in quantum cascade lasers and applications
TL;DR: In this article, a detailed review of the performance of quantum cascade (QC) laser can be found, where the inter-subband transition is characterized through ultrafast carrier dynamics and the absence of the linewidth enhancement factor, with both features expected to have significant impact on laser performance.
Journal ArticleDOI
High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors
TL;DR: In this article, a GaAs quantum well infrared detector having a cutoff wavelength of λc=10.7 μm was used to achieve a blackbody detectivity of 1.0×1010 cm (Hz) 1/2/W at T=68 K, a temperature which is readily achievable with a cryogenic cooler.
Journal ArticleDOI
Broadband 8–12 μm high‐sensitivity GaAs quantum well infrared photodetector
TL;DR: In this article, the first high-detectivity bound state to extended state quantum well detectors which are peaked at λ = 10 μm was achieved. But the spectral bandwidth (Δν/ν) of these devices is three times larger than their earlier λ=8 μm device and the detectivity D* is background limited at T=50 K with D*=1×1010 cm (Hz)1/2 /W, and a noise equivalent temperature change of NEΔT=0.01 K.
Journal ArticleDOI
10- mu m GaAs/AlGaAs multiquantum well scanned array infrared imaging camera
TL;DR: In this article, a long-wavelength infrared imaging camera that uses a GaAs/Al/sub x/Ga/sub 1-x/As quantum-well infrared photodetector (QWIP) array is demonstrated.
References
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Journal ArticleDOI
First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
L. C. West,S. J. Eglash +1 more
TL;DR: In this paper, a dipole occurs between two envelope states of the conduction-band electron wave function, and is called a quantum well envelope state transition (QWEST).
Journal ArticleDOI
New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices
TL;DR: In this article, a 10.8 μm superlattice infrared detector based on doped quantum wells of GaAs/AlGaAs was proposed, which achieved a narrow bandwidth (10%) photosensitivity with a responsivity of 0.52 A/W and an estimated speed of 30 ps.
Journal ArticleDOI
Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides
B. F. Levine,R. J. Malik,James A. Walker,Kwong-Kit Choi,C. G. Bethea,D. A. Kleinman,J. M. Vandenberg +6 more
TL;DR: In this article, the infrared intersubband absorption at 8.2 μm in doped GaAs/AlAs quantum well superlattices was measured, with 95% of the incident infrared energy being absorbed.
Journal ArticleDOI
Observation of Stark shifts in quantum well intersubband transitions
Alex Harwit,James S. Harris +1 more
TL;DR: In this article, the authors observed Stark shifts of quantum well intersubband transitions in a perpendicular electric field and applied these tunable transitions to high-speed infrared light modulators.
Journal ArticleDOI
New mode of IR detection using quantum wells
D. D. Coon,R. P. G. Karunasiri +1 more
TL;DR: In this paper, a new mode of IR detection using photoemission from a single quantum well is proposed and optimization of the device performance by the proper choice of parameters is discussed.