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Recent progress in quantum cascade lasers and applications

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TLDR
In this article, a detailed review of the performance of quantum cascade (QC) laser can be found, where the inter-subband transition is characterized through ultrafast carrier dynamics and the absence of the linewidth enhancement factor, with both features expected to have significant impact on laser performance.
Abstract
Quantum cascade (`QC') lasers are reviewed. These are semiconductor injection lasers based on intersubband transitions in a multiple-quantum-well (QW) heterostructure, designed by means of band-structure engineering and grown by molecular beam epitaxy. The intersubband nature of the optical transition has several key advantages. First, the emission wavelength is primarily a function of the QW thickness. This characteristic allows choosing well-understood and reliable semiconductors for the generation of light in a wavelength range unrelated to the material's energy bandgap. Second, a cascade process in which multiple - often several tens of - photons are generated per electron becomes feasible, as the electron remains inside the conduction band throughout its traversal of the active region. This cascading process is behind the intrinsic high-power capabilities of the lasers. Finally, intersubband transitions are characterized through an ultrafast carrier dynamics and the absence of the linewidth enhancement factor, with both features being expected to have significant impact on laser performance. The first experimental demonstration by Faist et al in 1994 described a QC-laser emitting at 4.3 µm wavelength at cryogenic temperatures only. Since then, the lasers' performance has greatly improved, including operation spanning the mid- to far-infrared wavelength range from 3.5 to 24 µm, peak power levels in the Watt range and above-room-temperature (RT) pulsed operation for wavelengths from 4.5 to 16 µm. Three distinct designs of the active region, the so-called `vertical' and `diagonal' transition as well as the `superlattice' active regions, respectively, have emerged, and are used either with conventional dielectric or surface-plasmon waveguides. Fabricated as distributed feedback lasers they provide continuously tunable single-mode emission in the mid-infrared wavelength range. This feature together with the high optical peak power and RT operation makes QC-lasers a prime choice for narrow-band light sources in mid-infrared trace gas sensing applications. Finally, a manifestation of the high-speed capabilities can be seen in actively and passively mode-locked QC-lasers, where pulses as short as a few picoseconds with a repetition rate around 10 GHz have been measured.

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Citations
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Interband and Intraband Optical Studies of PbSe Colloidal Quantum Dots

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Si/SiGe heterostructures: from material and physics to devices and circuits

TL;DR: In this paper, the authors present a review of the material properties, growth techniques, band structure and the main electronic devices of the Si/SiGe heterostructure system, in particular, the important device technologies in mainstream microelectronics.
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Quantum cascade lasers in chemical physics

TL;DR: In the short space of 15 years since their first demonstration, quantum cascade lasers have become the most useful sources of tunable mid-infrared laser radiation as discussed by the authors, and the potential application of quantum cascade laser in other areas of chemical physics such as research on helium droplets, in population pumping and in matrix isolation infrared photochemistry.
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Whispering gallery microcavity lasers

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References
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PatentDOI

Quantum cascade laser

TL;DR: In this paper, the authors proposed a quantum cascade laser consisting of a gain region (14) consisting of several layers (20) each including: alternating strata of a first type (28) defining each AllnAs quantum barrier and strata with injection barriers interposed between two of the layers.
Journal ArticleDOI

Coupled‐Wave Theory of Distributed Feedback Lasers

TL;DR: In this article, an analysis of laser action in a periodic structure is presented, where the resonant frequencies and threshold criteria for the modes of oscillation have been determined for both index and gain periodicities.
Journal ArticleDOI

Quantum‐well infrared photodetectors

TL;DR: The literature on quantum-well infrared photodetectors (QWIPs) is reviewed in this paper, where a detailed discussion is given on the device physics of the intersubband absorption and hot-carrier transport processes for individual detectors, as well as the high performance which has been achieved for large staring arrays.
Book

Fundamentals of Semiconductors: Physics and Materials Properties

TL;DR: In this paper, the effect of quantum confinement on Electrons and Phonons in Semiconductors is discussed, as well as the effects of quantum confinement on Electron-Phonon Interactions.
Journal ArticleDOI

Gain spectra in GaAs double−heterostructure injection lasers

TL;DR: Gain spectra for GaAs double-heterostructure junction lasers have been obtained with high resolution by using an automated data aquisition system to analyze the Fabry−Perot resonance modulation in the spontaneous emission spectra as mentioned in this paper.
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