Journal ArticleDOI
High-speed monolithically integrated silicon photoreceivers fabricated in 130-nm CMOS technology
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TLDR
In this article, a complementary metaloxide-semiconductor (CMOS) monolithically integrated photoreceiver is presented, which operates at 8 Gb/s with 2dBm average input optical power and a bit error rate of less than 10/sup -9/.Abstract:
A complementary metal-oxide-semiconductor (CMOS) monolithically integrated photoreceiver is presented. The circuit was fabricated in a 130-nm unmodified CMOS process flow on 2-/spl mu/m-thick silicon-on-insulator substrates. The receiver operated at 8 Gb/s with 2-dBm average input optical power and a bit error rate of less than 10/sup -9/. The integrated lateral p-i-n photodetector was simultaneously realized with the amplifier and had a responsivity of 0.07 A/W at 850 nm. The measured receiver sensitivities at 5, 3.125, 2, and 1 Gb/s, were -10.9, -15.4, -16.5, and -19 dBm, respectively. A 3-V single-supply operation was possible at bit rates up to 3.125 Gb/s. The transimpedance gain of the receivers was in the range 53.4-31 dB/spl Omega/. The circuit dissipated total power between 10 mW and 35 mW, depending on the design.read more
Citations
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Journal ArticleDOI
Will silicon be the photonic material of the third millenium
TL;DR: This review will give a brief motivation for silicon microphotonics and try to give the state-of-the-art of this technology, where silicon is predicted to be the material to achieve a full integration of electronic and optical devices.
Journal ArticleDOI
A 3-Gb/s optical detector in standard CMOS for 850-nm optical communication
TL;DR: In this article, a monolithic optical detector, consisting of an integrated photodiode and a preamplifier in a standard 0.18/spl mu/m CMOS technology, is presented.
Journal ArticleDOI
A Reconfigurable Single-Photon-Counting Integrating Receiver for Optical Communications
TL;DR: This work investigates the properties of the receiver for optical communications in the visible spectrum, using its added functionality and reconfigurability to experimentally explore non-ideal influences and limiting factors similar to those of photodiode receivers.
Patent
Microstructure enhanced absorption photosensitive devices
Shih-Yuan Wang,Shih-Ping Wang +1 more
TL;DR: In this article, a technique for enhancing the absorption of photons in semiconductors with the use of microstructures such as pillars and/or holes is described. But this technique is limited to silicon photodiodes with wavelengths of 850 nm and with quantum efficiencies of approximately 90% or more.
Journal ArticleDOI
CMOS-Integrated Optical Receivers for On-Chip Interconnects
Solomon Assefa,Fengnian Xia,William M. J. Green,Clint L. Schow,Alexander V. Rylyakov,Yurii A. Vlasov +5 more
TL;DR: This paper reviews recent progress on CMOS-integrated optical receivers for on-chip interconnects, which have become attractive for achieving communication bandwidth well beyond terabit-per-second with low-power consumption.
References
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Proceedings ArticleDOI
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Proceedings ArticleDOI
A 3.3-V monolithic photodetector/CMOS-preamplifier for 531 Mb/s optical data link applications
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