Journal ArticleDOI
Highly Reliable High-Speed 1.1- $\mu$ m-Range VCSELs With InGaAs/GaAsP-MQWs
Hiroshi Hatakeyama,Takayoshi Anan,Akagawa Takeshi,K. Fukatsu,N. Suzuki,K. Tokutome,Masayoshi Tsuji +6 more
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TLDR
In this article, a high-speed 1.1-μm-range oxide-confined vertical-cavity surface-emitting laser (VCSEL) for large-scale optical interconnection applications is described.Abstract:
In this paper, we describe high-speed 1.1-μm-range oxide-confined vertical-cavity surface-emitting lasers (VCSELs) for large-scale optical interconnection applications. For achieving high data rates up to 25 Gbit/s under high temperature, we applied InGaAs/GaAsP strain-compensated multiple quantum wells (SC-MQWs) as the active layer. The developed device showed 25 Gbit/s error-free operation at 100°C. We also examined reliability of the VCSELs through accelerated life tests. The result showed an extremely long lifetime of about 10 thousand hours in MTTF under an ambient temperature of 150°C and a current density of about 19 kA/cm2. The level of reliability either equaled or surpassed that of conventional 0.85-μm VCSELs. Moreover, we revealed a typical failure mode of the device, which was caused by ≪110≫ dark line defects (DLDs) generated in the n-DBR layers under the current aperture area.read more
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Journal ArticleDOI
40 Gbit/s modulation of 1550 nm VCSEL
Werner Hofmann,Michael Muller,Philip Wolf,Alex Mutig,Tobias Gründl,G. Böhm,Dieter Bimberg,Markus-Christian Amann +7 more
TL;DR: In this paper, the modulation characteristics of vertical-cavity surface-emitting lasers with a buried tunnel junction emitting in the important wavelength regime around 1.55 m are presented.
Journal ArticleDOI
Rapidly swept, ultra-widely-tunable 1060 nm MEMS-VCSELs
Vijaysekhar Jayaraman,Garrett D. Cole,Martin E. Robertson,Christopher Burgner,Demis D. John,Ashfaque Uddin,A. Cable +6 more
TL;DR: These ultra-widely tunable lasers represent the first MEMS-VCSELs reported in this wavelength range, and are ideally suited for application in ophthalmic swept-source optical coherence tomography.
Journal ArticleDOI
Recorded Low Power Dissipation in Highly Reliable 1060-nm VCSELs for “Green” Optical Interconnection
Suguru Imai,Keishi Takaki,Shinichi Kamiya,H. Shimizu,J. Yoshida,Y. Kawakita,T. Takagi,Koji Hiraiwa,T. Suzuki,Norihiro Iwai,Takuya Ishikawa,Naoki Tsukiji,Akihiko Kasukawa +12 more
TL;DR: In this paper, the authors designed 1060-nm VCSELs with double intracavity structure to achieve high reliability and low power dissipation for the optical interconnection.
Journal ArticleDOI
Oxide-Relief and Zn-Diffusion 850-nm Vertical-Cavity Surface-Emitting Lasers With Extremely Low Energy-to-Data-Rate Ratios for 40 Gbit/s Operations
TL;DR: In this paper, a vertical-cavity surface-emitting laser (VCSEL) for high-speed (40 Gbps) operation with ultralow power consumption performance is presented.
Journal ArticleDOI
Oxidation of Al-bearing III-V materials: A review of key progress
John Dallesasse,Nick Holonyak +1 more
TL;DR: Since the discovery of III-V oxidation by Dallesasse and Holonyak in 1989, significant progress has been made both technically and commercially in the use of oxides in compound semiconductor devices as mentioned in this paper.
References
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Journal ArticleDOI
Defects in epitaxial multilayers: I. Misfit dislocations*
J.W. Matthews,A.E. Blakeslee +1 more
TL;DR: In this paper, it was shown that the interfaces between layers were made up of large coherent areas separated by long straight misfit dislocations and the Burgers vectors were inclined at 45° to (001) and were of type 1/2a.
Journal ArticleDOI
Semiconducting and other major properties of gallium arsenide
TL;DR: In this paper, the authors provide numerical and graphical information about many physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material, including properties of the material itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage.
Journal ArticleDOI
High-efficiency, high-speed VCSELs with 35 Gbit=s error-free operation
TL;DR: In this paper, a tapered-oxide-apertured 980 nm VCSEL with 35 Gbit/s error-free operation was demonstrated, which is the highest data rate reported for directly modulated VCSels to date.
Journal ArticleDOI
Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s
Sergey A. Blokhin,James A. Lott,Alex Mutig,Gerrit Fiol,N. N. Ledentsov,Mikhail V. Maximov,Alexey M. Nadtochiy,Vitaly Shchukin,Dieter Bimberg +8 more
TL;DR: In this paper, an oxide-confined 850 nm vertical-cavity surface-emitting laser operating at 40 Gbit/s at current densities ~10 kA/cm 2 is realized.
Journal ArticleDOI
32 Gbit/s multimode fibre transmission using high-speed, low current density 850 nm VCSEL
Petter Westbergh,Johan S. Gustavsson,Åsa Haglund,Anders Larsson,F. Hopfer,Gerrit Fiol,Dieter Bimberg,A. Joel +7 more
TL;DR: In this paper, an oxide confined 850 nm VCSEL biased at a current density of 11-14 kA/cm2 was used for error free transmission over multimode fiber at data rates up to 32 Gbit/s at 25C and 25 Gbps at 85C.
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