Proceedings ArticleDOI
Impact of bias, doping and High-K dielectric on RF stability performance of junctionless tri-gate transistor
Lochan Anil Vyas,Deshpande Akshay,Sanidhya Mohan Sharma,K. Sivasankaran,D. Kannadassan,Partha Sharathi Mallick +5 more
- pp 1377-1380
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TLDR
In this article, the effect of process parameter variation such as oxide material, oxide thickness, doping concentration along with bias conditions and different high-k dielectric on RF stability performance of Junctionless Tri-Gate Transistor (JLTGT) was presented.Abstract:
This paper presents the effect of process parameter variation such as oxide material, oxide thickness, doping concentration along with bias conditions and different high-k dielectric on RF stability performance of Junctionless Tri-Gate Transistor (JLTGT). The small signal RF parameter is obtained from extracted device parameters using TCAD (Technology Computer Aided Design). The results show that optimized JLTGT shows good RF stability performance.read more
References
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Microwave Transistor Amplifiers: Analysis and Design
TL;DR: In this article, the authors derived the Input and Output Stability Circles and the Unilateral Constant-Gain Circles from two-port Matching Networks and Signal Flow Graphs.
Journal ArticleDOI
Junctionless multigate field-effect transistor
Chi-Woo Lee,Aryan Afzalian,Nima Dehdashti Akhavan,Ran Yan,Isabelle Ferain,Jean-Pierre Colinge +5 more
TL;DR: In this article, the authors describe a metaloxide-semiconductor MOS transistor concept in which there are no junctions and the channel doping is equal in concentration and type to the source and drain extension doping.
Journal ArticleDOI
Performance estimation of junctionless multigate transistors
Chi-Woo Lee,Isabelle Ferain,Aryan Afzalian,Ran Yan,Nima Delidashti Akhavan,Pedrarn Razavi,Jean-Pierre Colinge +6 more
TL;DR: In this paper, the authors describe the simulation of the electrical characteristics of a new transistor concept called the junctionless multigate field effect transistor (MuGFET), which has no junctions, a simpler fabrication process, less variability and better electrical properties than classical inversionmode devices with PN junctions at the source and drain.
Journal ArticleDOI
Stability and Power-Gain Invariants of Linear Twoports
TL;DR: In this paper, it was shown that the stability of a linear two-port is invariant under arbitrary lossless terminations, under interchange of input and output, and under "immittance substitution", a transformation group involving the arbitrary interchanging of impedance and admittance formulations at both ports.
Journal ArticleDOI
High-Temperature Performance of Silicon Junctionless MOSFETs
Chi-Woo Lee,Adrien Borne,Isabelle Ferain,Aryan Afzalian,Ran Yan,N. Dehdashti Akhavan,Pedram Razavi,Jean-Pierre Colinge +7 more
TL;DR: In this paper, the temperature dependence of the main electrical parameters of junctionless (JL) silicon nanowire transistors is investigated and compared to the standard inversion-and accumulation-mode FETs.