Journal ArticleDOI
Impact of V/III ratio on electrical properties of GaN thick films grown by hydride vapor-phase epitaxy
TLDR
In this paper, the impact of V/III ratio on electrical properties of GaN thick films is investigated, which are grown by hydride vapor-phase epitaxy, and it is shown that the electron concentration decreases with the increase of V /III ratio, while their electrical resistivity and electron mobility increase simultaneously.Abstract:
Impact of V/III ratio on electrical properties of GaN thick films are investigated, which are grown by hydride vapor-phase epitaxy. The authors note that the electron concentration of GaN films decreases with the increase of V/III ratio, while their electrical resistivity and electron mobility increase simultaneously. These indicate that enhancing V/III ratio suppresses electron-feeding sources in GaN films, which is not by generating electron-trapping centers but by reducing donor-type defects. On the other hand, it is shown that the linewidth of x-ray rocking curves in GaN films decreases and the near-band edge emission intensity of 10K photoluminescence spectra increases as V/III ratio increases. These mean that higher V/III ratio condition helps for reducing crystalline point defects in GaN films. In terms of theoretical fitting into the temperature-dependence curves of electron mobilities, it is found that the electron transport of GaN films grown in lower V/III ratio condition is more hampered by de...read more
Citations
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Journal ArticleDOI
Simulation of high angle annular dark field scanning transmission electron microscopy images of large nanostructures
J. Pizarro,Pedro L. Galindo,Elisa Guerrero,A. Yáñez,M. P. Guerrero,Andreas Rosenauer,David L. Sales,Sergio I. Molina,Sergio I. Molina +8 more
TL;DR: In this article, a parallel software (SICSTEM) has been developed for high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) image simulation.
Journal ArticleDOI
Growth of (1 0 1¯ 3¯ ) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy
Tiefeng Wei,Qiang Hu,Ruifei Duan,Xin Wei,Ziqiang Huo,J.X. Wang,Y.P. Zeng,Gang Wang,Junqin Li +8 more
TL;DR: In this paper, the crystalline, surface, and optical properties of the (1.0, 1¯-3¯) semipolar GaN epilayers directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) were investigated.
Journal ArticleDOI
Effect of V/III ratio on the growth of (112¯2) AlGaN by metalorganic vapour phase epitaxy
TL;DR: In this article, the effect of V/III ratio on the growth and properties of AlGaN layers grown on (112¯2) AlN templates grown on sapphire by metalorganic vapour phase epitaxy was studied.
Journal ArticleDOI
Investigation of the crystallinity of N and Te codoped Zn-polar ZnO films grown by plasma-assisted molecular-beam epitaxy
Seunghwan Park,Tsutomu Minegishi,H. J. Lee,Jinsub Park,I.H. Im,Takafumi Yao,D. C. Oh,Toshinori Taishi,Ichiro Yonenaga,Jiho Chang +9 more
TL;DR: In this paper, the authors report on the crystallinity, N incorporation efficiency, optical properties, and electrical properties of N and Te codoped ZnO films grown by plasma-assisted molecular-beam epitaxy.
Journal ArticleDOI
Influence of heat treatments on electrical properties of ZnO films grown by molecular-beam epitaxy
D. C. Oh,Sang-Hyun Park,Hidemasa Goto,I. H. Im,M. N. Jung,Jiho Chang,Takafumi Yao,J. S. Song,C. H. Bae,C. S. Han,K. W. Koo +10 more
TL;DR: In this article, the influence of heat treatments on the electrical properties of ZnO films grown by molecular-beam epitaxy has been investigated, and it was shown that the electrical resistance of the X-ray diffraction linewidth is significantly decreased by the heat treatments.
References
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TL;DR: In this article, the hall effect and magnetoresistance in ungated structures are considered, as well as capacitance and conductance effects from deep traps in MESFETs gate current and parasitic-resistance effects.
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David C. Look,J. R. Sizelove +1 more
TL;DR: In this paper, a theory of charged-dislocation-line scattering is developed within the framework of the Boltzmann transport equation, and a fit of the theory to temperature-dependent Hall-effect data in GaN gives dislocation densities which are in excellent agreement with those measured by transmission electron microscopy.
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Observation of Native Ga Vacancies in GaN by Positron Annihilation
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The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy
B.-C. Chung,M. Gershenzon +1 more
TL;DR: Oxygen was observed to influence the electrical and optical properties of GaN layers grown by metalorganic vapor phase epitaxy as discussed by the authors, and a model based on impurity band formation was proposed to explain these experimental results.
Journal ArticleDOI
Thermal stress in gan epitaxial layers grown on sapphire substrates
TL;DR: In this article, the authors measured the curvature of wafer bending to measure the biaxial compressive stress in GaN epitaxial layers with different thicknesses grown on sapphire substrates by metalorganic vapor phase epitaxy using an AlN buffer layer.