Dislocation Scattering in GaN
David C. Look,J. R. Sizelove +1 more
TLDR
In this paper, a theory of charged-dislocation-line scattering is developed within the framework of the Boltzmann transport equation, and a fit of the theory to temperature-dependent Hall-effect data in GaN gives dislocation densities which are in excellent agreement with those measured by transmission electron microscopy.Abstract:
A theory of charged-dislocation-line scattering is developed within the framework of the Boltzmann transport equation. A fit of the theory to temperature-dependent Hall-effect data in GaN gives dislocation densities which are in excellent agreement with those measured by transmission electron microscopy. This work shows that threading edge dislocations in GaN indeed are electrically active, in agreement with recent theoretical predictions.read more
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Undoped AlGaN/GaN HEMTs for microwave power amplification
L.F. Eastman,V. Tilak,Joseph A. Smart,B.M. Green,E.M. Chumbes,Roman Dimitrov,Hyungtak Kim,Oliver Ambacher,Nils Weimann,T. Prunty,M. J. Murphy,William J. Schaff,James R. Shealy +12 more
TL;DR: In this paper, a two-dimensional electron gas (2DEG) is induced using the strong spontaneous and piezoelectric polarization inherent in the AlGaN/GaN structures, and three-dimensional nonlinear thermal simulations are made to determine the temperature rise from heat dissipation in various geometries.
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Gain mechanism in GaN Schottky ultraviolet detectors
TL;DR: In this article, a unified description of the gain mechanism in GaN Schottky detectors is presented, which is valid for all device structures under study, and represents a unified model for all devices under study.
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Electrical and optical properties of p-type ZnO
TL;DR: The most successful acceptor dopants have been the group V elements, N, P and As; N substitutes on the O site, but the exact structures of the P and AS acceptors have not yet been established as mentioned in this paper.
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Dislocation scattering in a two-dimensional electron gas
TL;DR: In this article, a theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed, which is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors which have a large number of line dislocations piercing through the 2DEG.
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The role of threading dislocations in the physical properties of GaN and its alloys
James S. Speck,S. J. Rosner +1 more
TL;DR: In this paper, the role of threading dislocations (TDs) in the physical properties of GaN and its alloys has been reviewed and a growing body of work provides compelling evidence that TDs in the group-III nitrides behave as non-radiative recombination centers, have energy levels in the otherwise forbidden energy gap, act as charged scattering centers in doped materials, and provide a leakage current pathway.