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Improvements of on-membrane method for thin film thermal conductivity and emissivity measurements

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TLDR
In this article, a numerical simulation and various test-structure configurations were developed which enable the measurement of the in-plane thermal conductivity and emissivity of on-membrane thin films in a versatile and accurate manner.
Abstract
A numerical simulation and various test-structure configurations were developed which enable the measurement of the in-plane thermal conductivity and emissivity of on-membrane thin films in a versatile and accurate manner. The simulation takes into account the two-dimensional heat transfer in the membrane. Consequently, shorter membrane can be used and strained materials can be measured. The numerical simulation along with the new test-structures is used to understand the convective heat transfer at small scales and to quantify it. The measurement method is tested on various materials ranging from ceramics, metals to polycrystalline silicon.

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Journal ArticleDOI

Thermal characterization and analysis of phase change random access memory

TL;DR: In this article, the crossplane thermal conductivity of Ge2Sb2Te5 and TiN thin films has been measured at room temperature by the 3ω method, and the performance of phase change random access memory (PC-RAM) cells has been evaluated as a function of both the measured thermal conductivities of the PC material and the reset current intensity independently of the thermal properties of the pseudoelectrodes by the way of analytical formula.
Journal ArticleDOI

Temperature distribution in a thin-film chip utilized for advanced nanocalorimetry

TL;DR: In this article, a non-adiabatic condition for ultra-fast thin-film cooling calorimetry is proposed, which allows not only fast heating but also fast cooling at rates up to 10,000 K s−1.
Journal ArticleDOI

Structure and thermoelectric properties of boron doped nanocrystalline Si0.8Ge0.2 thin film

TL;DR: In this article, the structure and thermoelectric properties of boron doped nanocrystalline Si0.8Ge0.2 thin films are investigated for potential application in microthermoelectrics devices.
Journal ArticleDOI

Thin-Film Thermal Conductivity Measurement Using Microelectrothermal Test Structures and Finite-Element-Model-Based Data Analysis

TL;DR: In this paper, a method for measuring thermal conductivities of thin metallic films with nanoscale thickness is presented, which combines a micro electrothermal test structure with a finite-element-based data analysis procedure.
Journal ArticleDOI

Highly sensitive thermal conductivity measurements of suspended membranes (SiN and diamond) using a 3ω-Völklein method

TL;DR: The method has been applied to measure thermal properties of low stress silicon nitride and polycrystalline diamond membranes with thickness ranging from 100 nm to 400 nm and support a significant grain size effect on the thermal transport.
References
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Book

Optical Waves in Layered Media

Pochi Yeh, +1 more
TL;DR: In this article, the Electromagnetic Field and its interaction with Matter are discussed, and a matrix formulation for Isotropic Layered Media is proposed. But it is not shown how to apply it to a single homogeneous and isotropic layer.
Book

Optical waves in layered media

Pochi Yeh
TL;DR: Optics of Semiconductor Quantum Wells and Superlattice Structures: Optics of A Single Homogeneous and Isotropic Layer and some Applications of Isotropic Layered Media.
Journal ArticleDOI

Thermal conductivity measurement from 30 to 750 K: the 3ω method

TL;DR: An ac technique for measuring the thermal conductivity of dielectric solids between 30 and 750 K is described in this article, which can be applied to bulk amorphous solids and crystals.
Journal ArticleDOI

Data reduction in 3ω method for thin-film thermal conductivity determination

TL;DR: In this article, a detailed analysis and mathematical modeling of the 3ω method applied for different experimental conditions is presented, including the finite substrate thickness, the anisotropic nature of the film and substrate thermal conductivity, the film-substrate thermal property contrasts, the effect of heat capacitance of the heater, and the effects of thermal boundary resistance.
Journal ArticleDOI

Spectral Emissivity of Silicon

TL;DR: In this paper, the emissivity of silicon was observed in the spectral region from 0.4 to 15 µ at various temperatures from 340°K to 1070°K by using two n-type specimens with the resistivity of 15 ohmcm and 7×10-3 ohm-cm at 300°K, respectively.
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