Patent
InP-Based Transistor Fabrication
TLDR
In this paper, a dielectric layer may be deposited by ALD over a semiconductor layer including In and P. A channel layer is formed above a buffer layer having a lattice constant similar to a InP.Abstract:
Methods of forming structures that include InP-based materials, such as a transistor operating as an inversion-type, enhancement-mode device. A dielectric layer may be deposited by ALD over a semiconductor layer including In and P. A channel layer may be formed above a buffer layer having a lattice constant similar to a lattice constant of InP, the buffer layer being formed over a substrate having a lattice constant different from a lattice constant of InP.read more
Citations
More filters
Patent
Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Patent
Process feed management for semiconductor substrate processing
Fred Pettinger,Carl White,Dave Marquardt,Sokol Ibrani,Eric Shero,Todd Dunn,Kyle Fondurulia,Mike Halpin +7 more
TL;DR: In this paper, a gas channel plate for a semiconductor process module is described, which includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps.
Patent
Method of forming insulation film by modified PEALD
TL;DR: In this paper, a method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.
Patent
Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
TL;DR: In this paper, a process and system for depositing a thin film onto a substrate using atomic layer deposition (ALD) is described. But it is not shown how to apply ALD to a metal oxide layer.
References
More filters
Journal ArticleDOI
Defects in epitaxial multilayers: I. Misfit dislocations*
J.W. Matthews,A.E. Blakeslee +1 more
TL;DR: In this paper, it was shown that the interfaces between layers were made up of large coherent areas separated by long straight misfit dislocations and the Burgers vectors were inclined at 45° to (001) and were of type 1/2a.
Journal ArticleDOI
Electrically pumped hybrid AlGaInAs-silicon evanescent laser
TL;DR: An electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding is reported.
Journal ArticleDOI
Etch rates for micromachining processing-Part II
TL;DR: In this paper, the etch rates of 53 materials that are used or potentially can be used or in the fabrication of microelectromechanical systems and integrated circuits were prepared.
Journal ArticleDOI
Etch rates for micromachining processing
TL;DR: The etch rates for 317 combinations of 16 materials (single-crystal silicon, doped, and undoped polysilicon, several types of silicon dioxide, stoichiometric and silicon-rich silicon nitride, aluminum, tungsten, titanium, Ti/W alloy, and two brands of positive photoresist) used in the fabrication of microelectromechanical systems and integrated circuits in 28 wet, plasma, and plasmaless-gas-phase etches (several HF solutions, H/sub 3/PO/sub 4), HNO/sub
Journal ArticleDOI
Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
TL;DR: In this article, GaN layers with a dislocation density as low as 6×107 cm-2 were grown on 2-inch-diameter sapphire wafers.
Related Papers (5)
Semiconductor device having MIS field effect transistors or three-dimensional structure
Satoshi Inaba,Kazuya Ohuchi +1 more