Journal ArticleDOI
Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 mu m semiconductor lasers
I. Joindot,J.L. Beylat +1 more
TLDR
In this paper, the intervalence band absorption (IVBA) coefficient k/sub 0/ in three types of active layer structure: bulk, unstrained (MQW) and strained multiquantum wells was measured by observing the spontaneous emission from the uncleaved facets of Fabry-Perot lasers.Abstract:
Measurements are reported of intervalence band absorption (IVBA) coefficient k/sub 0/ in three types of active layer structure: bulk, unstrained (MQW) and strained multiquantum wells. The IVBA measurements are performed by observing the spontaneous emission from the uncleaved facets of DCPBH Fabry-Perot lasers. k/sub 0/=(3.7+or-0.3)*10/sup -17/ cm/sup 2/ is obtained for bulk, (1.4+or-0.2)*10/sup -16/ cm/sup 2/ for MQW unstrained and (3.5+or-0.3)*10/sup -17/ cm/sup 2/ for strained MQW structures.read more
Citations
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Journal ArticleDOI
High-performance uncooled 1.3-/spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications
Chung-En Zah,Rajaram Bhat,Bhadresh Pathak,F. Favire,Wei Lin,M. C. Wang,Nicholas C. Andreadakis,D. M. Hwang,M.A. Koza,Tein-Pei Lee,Z. Wang,D. Darby,D. Flanders,J.J. Heieh +13 more
TL;DR: In this paper, the authors investigated the temperature characteristics of threshold current, quantum efficiency, and modulation speed of uncooled semiconductor lasers and found that the intrinsic material parameters are similar in magnitude and in temperature dependence if they are normalized to each well.
Journal ArticleDOI
Band-structure engineering in strained semiconductor lasers
Eoin P. O'Reilly,Alfred R. Adams +1 more
TL;DR: In this article, the influence of both compressive and tensile strain on semiconductor lasers and optical amplifiers is reevaluated in the light of recent experimental and theoretical work, which appears to adequately explain the TE and TM gain in compressive-and tensile structures, including polarizationindependent amplifiers, the behavior of visible lasers and the improved frequency characteristics of InGaAs/GaAs lasers.
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Tunable Laser Diodes
TL;DR: In this paper, the fundamental laser diode characeristics single-mode laser diodes are discussed, and the linewidth broadening of discontinuously tunable laser-diodes related components is discussed.
Journal ArticleDOI
Self-consistent analysis of high-temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers
TL;DR: In this paper, the authors present a comprehensive evaluation of the temperature effects on the threshold current and the slope efficiency of Fabry-Perot ridge-waveguide lasers between 20/spl deg/C and 120/spl dc.
Journal ArticleDOI
1.5 [micro sign]m wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power
TL;DR: In this paper, a 1.5 µm wavelength InGaAsP/InP separate confinement multiquantum well long cavity laser with broadened waveguides was demonstrated for a 200 µm aperture.
References
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Journal ArticleDOI
Intervalence band absorption in strained and unstrained InGaAs multiple quantum well structures
TL;DR: In this article, the authors reported the direct determination of absorption losses in unstrained and strained InGaAs/InGaAsP and InGaAlAs/inGaAsAlAs and strained layer multiple quantum well (MQW) laser structures.