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Journal ArticleDOI

Diode Lasers and Photonic Integrated Circuits

Larry A. Coldren, +1 more
- 01 Feb 1997 - 
- Vol. 36, Iss: 2, pp 616-617
TLDR
In this paper, a Phenomenological Approach to Diode Lasers is presented, where mirrors and Resonators are used for diode luminaries, and coupled-mode theory is applied.
Abstract
Ingredients. A Phenomenological Approach to Diode Lasers. Mirrors and Resonators for Diode Lasers. Gain and Current Relations. Dynamic Effects. Perturbation and Coupled--Mode Theory. Dielectric Waveguides. Photonic Integrated Circuits. Appendices. Index.

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Citations
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Journal ArticleDOI

Nearly 100% internal phosphorescence efficiency in an organic light emitting device

TL;DR: In this paper, the authors demonstrate very high efficiency electrophosphorescence in organic light-emitting devices employing a phosphorescent molecule doped into a wide energy gap host, achieving a maximum external quantum efficiency of 19.0±1.0 and luminous power efficiency of 60±5 lm/W.
Journal ArticleDOI

Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques.

TL;DR: This paper is a review of recent progress made in organic thin films grown in ultrahigh vacuum or using other vapor-phase deposition methods and describes the most important work which has been published in this field since the emergence of OMBD in the mid-1980s.
Journal ArticleDOI

Semiconducting (Conjugated) Polymers as Materials for Solid‐State Lasers

TL;DR: In this article, the important materials issues are reviewed and the prospects for making polymer diode lasers are discussed, as well as the possible applications of polymer polymers in light-emissive laser materials.
Journal ArticleDOI

Electrically Driven Single-Cell Photonic Crystal Laser

TL;DR: The experimental demonstration of an electrically driven, single-mode, low threshold current (∼260 μA) photonic band gap laser operating at room temperature is reported, a small step toward a thresholdless laser or a single photon source.
References
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Journal ArticleDOI

Statistics of the Recombinations of Holes and Electrons

TL;DR: In this article, the statistics of the recombination of holes and electrons in semiconductors were analyzed on the basis of a model in which the recombinations occurred through the mechanism of trapping.
Journal ArticleDOI

k → · p → perturbation theory in III-V compounds and alloys: a reexamination

TL;DR: In this article, an experimental value of the interband matrix element (P}^{2} was derived with a precision of 10% in a three-band calculation, whereas a multiband approximation is required for ${m}^{*}$.
Journal ArticleDOI

Nearly ideal electronic properties of sulfide coated GaAs surfaces

TL;DR: In this paper, a robust covalently bonded sulfide layer was proposed to explain the favorable electronic properties of GaAs/GaAs interfaces, and the surface recombination velocity at the interface between Na2S⋅9H2O and GaAs began to approach that of the nearly ideal AlGaAs/GAAs interface.

Heterostructure lasers. Part A. Fundamental principles

H.C. Casey, +1 more
TL;DR: In this paper, the authors present a survey of optical fields and wave propagation, Stimulated Emission in Semiconductors (SEM), and Heterojunctions (TFD).