Journal ArticleDOI
Investigation of surface morphology and ion activation of aluminium implanted 4H-SiC
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TLDR
In this paper, a graphite encapsulation layer was used for surface protection in the post-implantation activation annealing process of 4H-SiC power devices.Abstract:
Multiple-energy aluminium (Al+) implantation into 4H-SiC (0001) epilayer and activation anneal with a graphite encapsulation layer were investigated in this paper. Measurements showed that the implanted Al+ box doping profile was formed and a high ion activation ratio of 78% was achieved by 40 min annealing at 1600°C using a horizontal chemical vapor deposition (CVD) reactor. The step bunching effect associated with the high temperature post implantation activation annealing (PIA) process was dramatically suppressed by using the graphite encapsulation layer. And a flat and smooth surface with a small average surface roughness (RMS) value of around 1.16 nm was achieved for the implanted 4H-SiC after the PIA process. It was demonstrated that this surface protection technique is a quite effective process for 4H-SiC power devices fabrication.read more
Citations
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Journal ArticleDOI
Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution
TL;DR: In this paper, aluminum doping into 4H-SiC is performed by irradiating excimer laser light to 4HSiC immersed in aluminum chloride solution and aluminum is introduced in SiC at the concentration of over 1? 1020 cm?3 near the surface.
Journal ArticleDOI
The synthesis of micro-sized silicon carbide whiskers and the application for heat transfer enhancement
TL;DR: In this article, a simple and cost-effective method for the production of micro-sized silicon carbide whiskers at high yield and the effect on heat transfer enhancement for the whisker laden fluids is presented.
Journal ArticleDOI
4H-SiC trench gate MOSFETs with field plate termination
TL;DR: In this article, field plate-terminated 4H-SiC trench gate MOSFETs with and without field plate (FP)-terminated field plate termination are demonstrated, and it is found that more than 60% of the devices protected with FP termination are able to block 850 V.
Journal ArticleDOI
Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current
Qingwen Song,Yuan Hao,Chao Han,Yuming Zhang,Xiaoyan Tang,Yimeng Zhang,Hui Guo,Yimen Zhang,Renxu Jia,Yuehu Wang +9 more
TL;DR: In this article, a large-area monolithic 4H-SiC JBS diodes fabricated on a 10 µm epitaxial layer doped to 6×1015 cm−3 were reported.
Proceedings ArticleDOI
Enhanced aluminum doping profile in 4H-SiC by wet-chemical laser doping
TL;DR: In this paper, the enhancement of aluminum doping profile in semi-insulating 4H-SiC by using Eximer laser in AlCl3 aqueous solution is focused.
References
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Journal ArticleDOI
Deep levels created by low energy electron irradiation in 4H-SiC
TL;DR: In this paper, a low energy electron irradiation in the 80-250keV range was used to create only those intrinsic defects related to the initial displacements of carbon atoms in the silicon carbide lattice.
Journal ArticleDOI
Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons
Katsunori Danno,Tsunenobu Kimoto +1 more
TL;DR: In this paper, deep levels in n-type 4H-SiC epilayers have been investigated by deep level transient spectroscopy (DLTS) and the Z1∕2 and EH6∕7 centers are dominant in as-grown samples.
Journal ArticleDOI
Surface roughening in ion implanted 4H-silicon carbide
Michael A. Capano,Sei-Hyung Ryu,J.A. Cooper,Nils Nordell,Adrian Powell,D. E. Walker,Michael R. Melloch,K. Rottner,Sigbritt Karlsson +8 more
TL;DR: In this article, the authors examined the causes and possible solutions to surface roughening of implanted and annealed 4H-SiC ion implant using atomic force microscopy.
Journal ArticleDOI
Electrical activation of high-concentration aluminum implanted in 4H-SiC
TL;DR: In this article, the dependences of the electrical properties on the implanted Al+ dose and on the annealing time were examined by Hall effect measurements, and the experimentally obtained free-hole concentrations agree well with the theoretically expected values.
Journal ArticleDOI
Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC
TL;DR: In this paper, the authors investigated deep levels in the whole energy range of bandgap of 4H-SiC, which are generated by low-dose N+, P+, and Al+ implantation, by deep level transient spectroscopy (DLTS).