Journal ArticleDOI
Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD
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In this article, the influence of total gas pressure and methane concentration on diamond growth by microwave plasma chemical vapor deposition (MPCVD) was investigated and the growth rate was proportional to the methane concentration in the source gas while it exhibited a super-linear dependence on total pressure.About:
This article is published in Diamond and Related Materials.The article was published on 2006-11-01. It has received 38 citations till now. The article focuses on the topics: Diamond & Synthetic diamond.read more
Citations
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Journal ArticleDOI
Understanding the chemical vapor deposition of diamond: recent progress.
TL;DR: Experimental measurements in situ to diamond CVD reactors, and MPCVD in particular, coupled with models of the gas phase chemical and plasma kinetics to provide insight into the distribution of critical chemical species throughout the reactor are reviewed.
Journal ArticleDOI
Plasma-chemical processes in microwave plasma-enhanced chemical vapor deposition reactors operating with C/H/Ar gas mixtures
TL;DR: In this paper, a detailed description of a two-dimensional model of the plasma-chemical activation, transport, and deposition processes occurring in MW activated H/C/Ar mixtures, focusing particularly on the following base conditions: 4.4%CH 4 /7%Ar/balance H 2, pressure p=150 Torr, and input power P=1.5 kW.
Journal ArticleDOI
Grain-size-dependent diamond-nondiamond composite films: characterization and field-emission properties.
Debabrata Pradhan,I.-Nan Lin +1 more
TL;DR: The CH4 percentage (%) in Ar and H2 plasma during deposition plays a crucial role in the formation of diamond films with different grain sizes and nondiamond carbon contents, which, in turn, determines the field-emission behavior of the corresponding diamond films.
Journal ArticleDOI
HFCVD diamond deposition parameters optimized by a Taguchi Matrix
TL;DR: In this paper, a Figure-of-Merit (FOM) is proposed to assess the best combination of film properties: grain size, residual stress, structural quality and growth rate.
Journal ArticleDOI
Effects of carbon concentration and gas pressure with hydrogen-rich gas chemistry on synthesis and characterizations of HFCVD diamond films on WC-Co substrates
TL;DR: In this paper, the effects of extremely high or low carbon concentration (2%−14%) and gas pressure (800-Pa-3200-Pa) on crystal structures, grain sizes, phase compositions, surface and cross-sectional morphologies, growth rates, surface roughness, mechanical and tribological performances of various polycrystalline diamond films synthesized on cemented carbide (WC-Co) substrates with hydrogen-rich/argon-lean gas mixture adopting hot filament chemical vapor deposition (HFCVD) method.
References
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Journal ArticleDOI
Interpretation of Raman spectra of disordered and amorphous carbon
Andrea C. Ferrari,John Robertson +1 more
TL;DR: In this paper, a model and theoretical understanding of the Raman spectra in disordered and amorphous carbon is given, and the nature of the G and D vibration modes in graphite is analyzed in terms of the resonant excitation of \ensuremath{\pi} states and the long-range polarizability of the long range bonding.
Journal ArticleDOI
Characterization of bias-enhanced nucleation of diamond on silicon by invacuo surface analysis and transmission electron microscopy.
TL;DR: A model is proposed to help explain bias-enhanced nucleation on silicon, in hopes that this will improve the understanding of diamond nucleation, in general, and eventually result in the nucleation and growth of better-quality diamond films.
Journal ArticleDOI
Very high growth rate chemical vapor deposition of single-crystal diamond
TL;DR: This high-quality single-crystal MPCVD diamond may find numerous applications in electronic devices as high-strength windows and in a new generation of high-pressure instruments requiring large single-Crystal anvils.
Book ChapterDOI
Chemical vapour deposition of diamond
TL;DR: In this article, it was shown that the mechanism for diamond growth is complex and may involve surface adsorption processes in rate limiting steps, and that the growth rate of diamond crystals is enhanced by the influence of stacking errors.
Journal ArticleDOI
Silicon-on-diamond: An advanced silicon-on-insulator technology
A. Aleksov,X. Li,N. Govindaraju,J.M. Gobien,Scott D. Wolter,Scott D. Wolter,J.T. Prater,Zlatko Sitar +7 more
TL;DR: In this paper, a Si device layer on the nucleation side of the diamond film was used for thermal evaluation of SOD and the results indicated that SOD can sustain up to 10 times higher power loads than conventional silicon-on-insulator (SOI) technology.
Related Papers (5)
Deposition of smooth, oriented diamond films using microwave plasma chemical vapor deposition
Origin of the 1 1 5 0 − cm − 1 Raman mode in nanocrystalline diamond
Andrea C. Ferrari,John Robertson +1 more