Book ChapterDOI
Ion Beam Processing for Silicon-on-Insulator
Wolfgang Skorupa
- pp 39-54
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TLDR
In this paper, the authors proposed the use of ion beam processing in modern semiconductor technology in the area of VLSI and ULSI (Ultra Large Scale Integration) in order to produce integrated circuits of high packing density, low power consumption and high speed.Abstract:
During the last few years ion beam processing penetrated very aggressively in many branches of advanced solid state technology. This holds also for the modern semiconductor technology in the area of VLSI (Very Large Scale Integration) and ULSI (Ultra Large Scale Integration). SOI (Silicon-on-Insulator) is one of the most discussed candidates of this branch offering the possibility to produce integrated circuits of high packing density, low power consumption and high speed.read more
Citations
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Journal ArticleDOI
Swift heavy-ion-induced epitaxial crystallization of buried Si3N4 layer
TL;DR: In this article, the swift heavy ion-beam-induced epitaxial crystallization of a buried Si3N4 layer is reported. But this method requires high-resolution transmission electron microscopy and selected area diffraction patterns.
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MeV heavy ion induced recrystallization of buried silicon nitride layer: Role of energy loss processes
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Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric
I.P. Barchuk,V.I. Kilchitskaya,V. S. Lysenko,Alexey Nazarov,T. E. Rudenko,S.V. Djurenko,A. Rudenko,A.P. Yurchenko,D.B. Ballutaud,Jean-Pierre Colinge +9 more
TL;DR: In this article, the authors investigated the effect of radiation-induced charge trapping in buried insulators with the aim of improving the total dose radiation hardness of the buried dielectric layer.
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High-fluence Si-implanted diamond: Optimum implantation temperature for SiC formation
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References
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Journal ArticleDOI
Reduction of kink effect in thin-film SOI MOSFETs
TL;DR: In this article, the potential and electric field distribution within thin, fully depleted SOI devices is quite different from that observed within thicker, partially depleted devices, and the reduction of drain electric field and of source potential barrier brings about a dramatic decrease of kink effect.
Journal ArticleDOI
Ion-beam-induced epitaxial crystallization and amorphization in silicon
Francesco Priolo,Emanuele Rimini +1 more
TL;DR: In this paper, the ion-beam-induced epitaxial crystallization (IBIEC) and planar amorphization of amorphous Si (a-Si) layers onto single-crystal Si substrates is reviewed.
Journal ArticleDOI
FIPOS (Full Isolation by Porous Oxidized Silicon) technology and its application to LSI's
TL;DR: In this article, a FIPOS/CMOS logic array with 1.3K gate is successfully fabricated, which shows a higher speed and lower power dissipation than the gates fabricated by bulk CMOS technology.
Journal ArticleDOI
Low-temperature process to increase the grain size in polysilicon films
R. Reif,J.E. Knott +1 more
TL;DR: In this paper, a novel process for increasing the grain size in polycrystalline silicon films at temperatures near 500°C was described, which could lead to large-grain, uniformly oriented polysilicon films on amorphous surfaces.