Journal ArticleDOI
The emergence of spin electronics in data storage
Claude Chappert,Claude Chappert,Albert Fert,Albert Fert,Frédéric Nguyen Van Dau,Frédéric Nguyen Van Dau +5 more
TLDR
The authors are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials, allowing faster, low-energy operations: spin electronics is on its way.Abstract:
Electrons have a charge and a spin, but until recently these were considered separately. In classical electronics, charges are moved by electric fields to transmit information and are stored in a capacitor to save it. In magnetic recording, magnetic fields have been used to read or write the information stored on the magnetization, which 'measures' the local orientation of spins in ferromagnets. The picture started to change in 1988, when the discovery of giant magnetoresistance opened the way to efficient control of charge transport through magnetization. The recent expansion of hard-disk recording owes much to this development. We are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials. Ultimately, 'spin currents' could even replace charge currents for the transfer and treatment of information, allowing faster, low-energy operations: spin electronics is on its way.read more
Citations
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Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications
TL;DR: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each that are among the hottest research topics of the last decades.
Journal ArticleDOI
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
Andrea C. Ferrari,Francesco Bonaccorso,Francesco Bonaccorso,Vladimir I. Fal'ko,Konstantin S. Novoselov,Stephan Roche,Peter Bøggild,Stefano Borini,Frank H. L. Koppens,Vincenzo Palermo,Nicola M. Pugno,Nicola M. Pugno,Nicola M. Pugno,Jose A. Garrido,Roman Sordan,Alberto Bianco,Laura Ballerini,Maurizio Prato,Elefterios Lidorikis,Jani Kivioja,Claudio Marinelli,Tapani Ryhänen,Alberto F. Morpurgo,Jonathan N. Coleman,Valeria Nicolosi,Luigi Colombo,Albert Fert,Albert Fert,Mar García-Hernández,Adrian Bachtold,Grégory F. Schneider,Francisco Guinea,Cees Dekker,Matteo Barbone,Zhipei Sun,Costas Galiotis,Alexander N. Grigorenko,Gerasimos Konstantatos,Andras Kis,Mikhail I. Katsnelson,Lieven M. K. Vandersypen,A. Loiseau,Vittorio Morandi,Daniel Neumaier,Emanuele Treossi,Vittorio Pellegrini,Vittorio Pellegrini,Marco Polini,Alessandro Tredicucci,Gareth M. Williams,Byung Hee Hong,Jong Hyun Ahn,Jong Min Kim,Herbert Zirath,Bart J. van Wees,Herre S. J. van der Zant,Luigi Occhipinti,Andrea di Matteo,Ian A. Kinloch,Thomas Seyller,Etienne Quesnel,Xinliang Feng,K.B.K. Teo,Nalin Rupesinghe,Pertti Hakonen,Simon R. T. Neil,Quentin Tannock,Tomas Löfwander,Jari M. Kinaret +68 more
TL;DR: An overview of the key aspects of graphene and related materials, ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries are provided.
Journal ArticleDOI
Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection
Ioan Mihai Miron,Kevin Garello,Gilles Gaudin,Pierre-Jean Zermatten,Marius V. Costache,Stéphane Auffret,S. Bandiera,Bernard Rodmacq,Alain Schuhl,Pietro Gambardella +9 more
TL;DR: To prove the potential of in-plane current switching for spintronic applications, this work constructs a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures.
Journal ArticleDOI
Observation of the spin Seebeck effect
Ken-ichi Uchida,Saburo Takahashi,K. Harii,Jun'ichi Ieda,Wataru Koshibae,Kazuya Ando,Sadamichi Maekawa,Eiji Saitoh,Eiji Saitoh +8 more
TL;DR: The spin Seebeck effect allows us to pass a pure spin current, a flow of electron spins without electric currents, over a long distance, and is directly applicable to the production of spin-voltage generators, which are crucial for driving spintronic devices.
Journal ArticleDOI
Antiferromagnetic spintronics
TL;DR: This Review focuses on recent works that have addressed how to manipulate and detect the magnetic state of an antiferromagnet efficiently and briefly mentions the broader context of spin transport, magnetic textures and dynamics, and materials research.
References
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Journal ArticleDOI
Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices.
Mario Norberto Baibich,J. M. Broto,Albert Fert,F. Nguyen Van Dau,Frédéric Petroff,P. Etienne,G. Creuzet,A. Friederich,Jean Chazelas +8 more
TL;DR: This work ascribes this giant magnetoresistance of (001)Fe/(001)Cr superlattices prepared by molecularbeam epitaxy to spin-dependent transmission of the conduction electrons between Fe layers through Cr layers.
Journal ArticleDOI
Current-driven excitation of magnetic multilayers
TL;DR: In this paper, a new mechanism was proposed for exciting the magnetic state of a ferromagnet, where a transfer of vectorial spin accompanied an electric current flowing perpendicular to two parallel magnetic films connected by a normal metallic spacer.
Journal ArticleDOI
Emission of spin waves by a magnetic multilayer traversed by a current.
TL;DR: In this paper, the interaction between spin waves and itinerant electrons is considerably enhanced in the vicinity of an interface between normal and ferromagnetic layers in metallic thin films, leading to a local increase of the Gilbert damping parameter which characterizes spin dynamics.
Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
TL;DR: In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.
Journal ArticleDOI
Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange
TL;DR: The electrical resistivity of Fe-Cr-Fe layers with antiferromagnetic interlayer exchange increases when the magnetizations of the Fe layers are aligned antiparallel, much stronger than the usual anisotropic magnetoresistance.