Journal ArticleDOI
Large photo-induced voltage in a ferroelectric thin film with in-plane polarization
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TLDR
In this article, a large photoinduced voltage of 7 V was obtained with an in-plane poled ferroelectric thin film having a composition of WO3 modified Pb0.97La0.03(Zr0.52Ti0.48)O3 (PLWZT) under ultraviolet (UV) illumination for about 80 s.Abstract:
A large photoinduced voltage of 7 V was obtained with an in-plane poled ferroelectric thin film having a composition of WO3 modified Pb0.97La0.03(Zr0.52Ti0.48)O3 (PLWZT), under ultraviolet (UV) illumination for about 80 s. By poling the ferroelectric film along the surface plane through pairs of interdigital electrodes, the interelectrode distance constraint on the voltage magnitude arising from the small film thickness was broken. Our experimental results showed that both the direction and magnitude of the photovoltaic output could be tuned with the poling electric field. The dependence of the photoinduced voltage on light wavelength, light intensity, and the gap of the interdigital electrode were investigated. The advantages of the photovoltaic configuration on the basis of an in-plane poled ferroelectric thin film were analyzed.read more
Citations
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Journal ArticleDOI
Mutual Insight on Ferroelectrics and Hybrid Halide Perovskites: A Platform for Future Multifunctional Energy Conversion.
Richa Pandey,Gaurav Vats,Jae Yun,Christopher R. Bowen,Anita Ho-Baillie,Jan Seidel,Keith T. Butler,Sang Il Seok +7 more
TL;DR: An insight into the analogies, state-of-the-art technologies, concepts, and prospects under the umbrella of perovskite materials (both inorganic-organic hybrid halideperovskites and ferroelectric perovkites) for future multifunctional energy conversion and storage devices is provided.
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Photovoltaic Switching Mechanism in Lateral Structure Hybrid Perovskite Solar Cells
Yongbo Yuan,Jungseok Chae,Jungseok Chae,Yuchuan Shao,Qi Wang,Zhengguo Xiao,Andrea Centrone,Jinsong Huang +7 more
TL;DR: In this paper, the long range electromigration of methylammonium ions (MA+) in MAPbI3 perovskite was observed directly using the photo-thermal induced resonance technique.
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Bulk Photovoltaic Effect at Visible Wavelength in Epitaxial Ferroelectric BiFeO3 Thin Films
Wei Ji,Kui Yao,Yung C. Liang +2 more
TL;DR: The photovoltaic effect in epitaxial BFO thin films is studied and an open-circuit voltage Voc of 0.3 V is obtained, demonstrating that photocurrent direction can be switched by the polarization direction of the BFO film and that the ferroelectric polarization is the main driving force of the observed photov Holtaic effect.
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Arising applications of ferroelectric materials in photovoltaic devices
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Fundamentals of Multiferroic Materials and Their Possible Applications
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References
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Journal ArticleDOI
Barrier Photovoltaic Effects in PZT Ferroelectric Thin Films
TL;DR: In this article, the photoelectric properties of metal-ferroelectric- metal thin film structures upon exposure to radiation in different ranges of mercury arc lamp spectrum are stud- ied for the Pb(Zr 0.5 2Ti 0.48 )O 3 (PZT ) ferroelectrics.
Journal ArticleDOI
Photonic Control of Cylindrical Shells with Electro-Optic Photostrictive Actuators
TL;DR: In this paper, a coupled optopiezothermoelastic shell theory is presented that incorporates photovoltaic, pyroelectric, piezoelectric, and thermal effects and has the capability to accurately predict the response of a shell to a command illumination applied to the photostrictive actuators.
Journal ArticleDOI
Photodiode properties of epitaxial Pb(Ti, Zr)O3/SrTiO3 ferroelectric heterostructures
Yukio Watanabe,Motochika Okano +1 more
TL;DR: In this article, the photovoltaic effect of typical ferroelectric oxides has been found in heterostructures of typical pn-like oxides, such as Pb(Ti, Zr)O3/Nb-doped SrTiO3, and a preliminary nonoptimized device shows high performance such as open circuit voltage of 0.7-0.8 V, external conversion efficiency of 0 6% to 0.8% and response time faster than 20 μs for ultraviolet light at room temperature, suggesting the potential of this di
Journal ArticleDOI
Effects of WO3 dopant on the structure and electrical properties of Pb0.97La0.03(Zr0.52Ti0.48)O3 thin films
Santiranjan Shannigrahi,Kui Yao +1 more
TL;DR: In this article, a defect chemistry mechanism indicating the reduction of oxygen vacancies by the substitution of W for Ti at different doping concentrations has been proposed, which shows that WO3 dopant plays a significant role on the structure and electrical properties of the PLWZT films.
Journal ArticleDOI
Preparation, Structure, and Properties of 0.3Pb(Zn1/3Nb2/3)O3-0.7PbTiO3 Thin Films on LaNiO3/YSZ/Si Substrates
TL;DR: In this paper, an yttrium-stabilized ZrO2 (YSZ) buffer layer was used as a buffer layer between a LaNiO3 (LNO) film and the Si substrate, where the LNO layer served as both the bottom electrode and seeding layer for the PZN−0.7PT films.
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