Journal ArticleDOI
Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs
TLDR
In this paper, an advanced model to explain the current spreading phenomenon of a conventional GaN-based light-emitting diode is presented, and an equivalent circuit consisting of the two lateral resistance components of the p-transparent electrode and the n-type layer is proposed.Abstract:
An advanced model to explain the current spreading phenomenon of a conventional GaN-based light-emitting diode is presented. For this work, an equivalent circuit, consisting of the two lateral resistance components of the p-transparent electrode and the n-type layer is proposed. Theoretical calculations clearly reveal that the current density crowds near the n or p pads according to the device parameters and has an exponential behavior as a function of the lateral length. Based on these results, appropriate device parameters including the critical transparent-electrode thickness were determined, leading to a perfectly uniform current distribution. It was even possible to demonstrate the ideal device geometry without the need for a transparent electrode such as an interdigitated structure.read more
Citations
More filters
Patent
Light Emitting Device
TL;DR: By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organics layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between the cathode and the organic compound layer, and therefore electrons can be injected from the cathodes, and transmission of the injected electrons can also be performed with good efficiency as discussed by the authors.
Journal ArticleDOI
High-power and reliable operation of vertical light-emitting diodes on bulk GaN
Xian-An Cao,S. D. Arthur +1 more
TL;DR: In this article, the vertical LED was subjected to a stress test at 400mA and showed minimal degradation of optical power, whereas the same stress resulted in the destruction of the lateral LED on sapphire due to increased current crowding and self-heating.
Journal ArticleDOI
Thermal investigation of high power Optical Devices by transient testing
TL;DR: In this article, a combined optical and thermal measurement for the characterization of power light emitting diodes (LEDs) is presented, where a model explaining R/sub th/ changes at different current levels is proposed.
Patent
Optimized contact design for flip-chip led
TL;DR: In this article, a light emitting diode is formed as a die with a stacked structure having a first region and a mesa projecting from a surface of the first region, the trace having a spiral, segmented/interdigitated, loop or pattern.
Journal ArticleDOI
Monolithic Micro Light-Emitting Diode/Metal Oxide Nanowire Gas Sensor with Microwatt-Level Power Consumption.
TL;DR: The smallest fabricated gas sensor showed excellent NO2 sensitivity and robustness to high humidity conditions, which demonstrate its potential for practical applications in mobile internet of things (IoT) devices.
References
More filters
Book
The Blue Laser Diode: GaN based Light Emitters and Lasers
Shuji Nakamura,Gerhard Fasol +1 more
TL;DR: The physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GAN p-type GaN InGaN Zn and Si co-doped GaN double-heterostructure blue and blue green LEDs inGaN single-quantum-well structure LEDs room-temperature pulsed operation of laser diodes emission mechanisms of LEDs and LDs room temperature CW operation of InGAN MQW LDs latest results as discussed by the authors.
Journal ArticleDOI
Current crowding in GaN/InGaN light emitting diodes on insulating substrates
TL;DR: In this paper, the p-side-up mesa structure GaN/InGaN LEDs with high contact resistance and p-type confinement layer resistivity have a relatively uniform current distribution.
Journal ArticleDOI
Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates
TL;DR: In this paper, current crowding in mesa-structure GaInN/GaN light emitting diodes (LEDs) grown on insulating substrates is analyzed.
Journal ArticleDOI
Modeling of a GaN-based light-emitting diode for uniform current spreading
TL;DR: In this paper, the effect of current density on the reliability characteristics of the GaN/InGaN multiquantum-well light-emitting diode (LED) has been examined from the view point of uniform current spreading.
Journal ArticleDOI
The effect of distributed series resistance on the dark and illuminated current—Voltage characteristics of solar cells
TL;DR: In this paper, the authors analyzed series resistance effects in solar cells and the correctness of representing these by a lumped parameter is discussed for any conditions of bias and illumination, where r e and r b are the emitter layer and base region resistances, respectively.