Journal ArticleDOI
Lead-free alternatives for interconnects in high-temperature electronics
About:
This article is published in Journal of Electronic Packaging.The article was published on 2018-03-01. It has received 5 citations till now.read more
Citations
More filters
Journal ArticleDOI
Review of Thermal Packaging Technologies for Automotive Power Electronics for Traction Purposes
Journal ArticleDOI
Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review
TL;DR: The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology, as well as MEMS devices.
Journal ArticleDOI
Lifetime Prediction of a SiC Power Module by Micron/Submicron Ag Sinter Joining Based on Fatigue, Creep and Thermal Properties from Room Temperature to High Temperature
TL;DR: In this article, the lifetime prediction of a SiC power module by Ag sinter joining based on mechanical properties including tensile, fatigue, and creep properties from room temperature to 200°C, as well as thermal properties including thermal conduction and the coefficient of thermal expansion were evaluated.
Journal ArticleDOI
High Electrical and Thermal Conductivity of Nano-Ag Paste for Power Electronic Applications
TL;DR: The nano-Ag paste consisted of Ag nanoparticles and organic solvents, which would be removed by evaporation or decomposition during sintering as mentioned in this paper, and the resistivity of sintered bulk was 835×× 10−6 Ω cm, and its thermal conductivity was 247 W −m−m−1 K−1 The Si/SiC chips and direct bonding copper (DBC) substrates could be bonded by this nano-ag paste at low temperature.
Book ChapterDOI
SiC Single Crystal Semiconductors
TL;DR: SiC semiconductors have seen a rapid rise since 2001 because of threefold larger band gap than silicon, 10-fold higher breakdown field strength than silicon and threefold higher saturation drift velocity than silicon; they can operate at up to 600°C-650°C (silicon ~200°C) as mentioned in this paper .
References
More filters
Journal ArticleDOI
Die Attach Materials for High Temperature Applications: A Review
TL;DR: This literature work seeks to review the numerous research attempts thus far for high temperature die attach materials on wide band gap materials of silicon carbide, gallium nitride and diamond, document their successes, concerns and application possibilities, all of which are essential for highTemperature reliability.
Journal ArticleDOI
BiSb alloys for magneto-thermoelectric and thermomagnetic cooling
TL;DR: The thermoelectric and thermomagnetic properties of undoped Bi-Sb alloys have been investigated with highly homogeneous single crystals throughout the entire alloy composition as functions of temperature (77-300°K), magnetic field (0-7·5 kilo-oersteds), and crystallographic direction (∥ and ⊥ to the trigonal axis) as mentioned in this paper.
Book
High Temperature Electronics
TL;DR: High Temperature Electronics as discussed by the authors provides a broad overview of the materials selection, design, and thermal management of high temperature electronics, as well as the tradeoffs involved in materials selection and design.
Journal ArticleDOI
Flash method of measuring the thermal diffusivity. A review
Libor Vozar,Wolfgang Hohenauer +1 more
TL;DR: A survey of data-reduction methods-algorithms for calculation of thermal diffusivity from the experimental data can be found in this article, where an up-to-date summary of the theory and application of the flash method is presented.