Journal ArticleDOI
Light-emitting diodes with a modulation bandwidth of more than 1 GHz
J. Heinen,W. Huber,W. Harth +2 more
TLDR
In this paper, the design principle and fabrication of high-speed l.e.d.s with a 3dB modulation bandwidth in the gigahertz range are described. And the modulation characteristic, radiance and spectrum have been measured.Abstract:
The design principle and the fabrication of high-speed l.e.d.s with a 3dB modulation bandwidth in the gigahertz range is described. The modulation characteristic, radiance and spectrum have been measured. The results demonstrate that these l.e.d.s are suited as light generators in optical transmission systems with a bandwidth in excess of 1 GHz.read more
Citations
More filters
Journal ArticleDOI
Phasor Imaging: A Generalization of Correlation-Based Time-of-Flight Imaging
TL;DR: It is shown that, for a broad range of scenes, global radiance (inter-reflections and volumetric scattering) vanishes for frequencies higher than a scene-dependent threshold and is used for developing two novel scene recovery techniques.
Journal ArticleDOI
Tilted-charge high speed (7 GHz) light emitting diode
TL;DR: In this paper, an asymmetrical two-junction tilted-charge LED is proposed, which employs an n-type buried drain layer beneath the p-type active region. And the drain layer tilts and pins the charge in the manner of a heterojunction bipolar light emitting transistor (HBLET), selecting and allowing only fast recombination.
Journal ArticleDOI
GHz bandwidth GaAs light-emitting diodes
Chih-Hung Chen,M.C. Hargis,Jerry M Woodall,Michael R. Melloch,J. S. Reynolds,Eli Yablonovitch,W. Wang +6 more
TL;DR: In this article, double-heterostructure GaAs/GaAlAs light-emitting diodes (LEDs) have been fabricated with the emitter regions beryllium doped to 2×1019 and 7×101 9 cm−3.
Journal ArticleDOI
Gigabit electronics—A review
TL;DR: In this paper, the authors investigated the Gigabit transistors and transistors with high packing density for low interconnection delay, but power dissipation leads to limitations, which are due to the involved wide bandwidths at microwave spectral frequencies.
Journal ArticleDOI
Scaling of light emitting transistor for multigigahertz optical bandwidth
TL;DR: In this article, an n-InGaP/p-AlGaAs/i-inGaAs-QW/n-GaAs heterojunction bipolar light emitting transistor (HBLET) was proposed to achieve spontaneous optical-signal bandwidth of 1.8-4.3 GHz.
References
More filters
Journal ArticleDOI
Electron lifetime and diffusion constant in germanium-doped gallium arsenide
G. A. Acket,W. Nijman,H. 't Lam +2 more
TL;DR: In this article, the lifetime of Ge-doped p-type GaAs grown by liquid phase epitaxy has been determined as a function of doping level using an optical phase shift technique.
Journal ArticleDOI
Frequency response of GaAlAs light-emitting diodes
TL;DR: In this article, the frequency response of epitaxial GaAlAs single-heterojunction light-emitting diodes was investigated as a function of active-layer hole-concentration and diode area.
Journal ArticleDOI
Proton bombarded GaAlAs:GaAs light emitting diodes
TL;DR: In this paper, a high-speed high-radiance luminescent diodes for optical transmission systems have been fabricated and a Proton bombardment is used for confining the area of the active region.
Related Papers (5)
Power and modulation bandwidth of gaAs-AlGaAs high-radiance LED's for optical communication systems
Tien Lee,Andrew Dentai +1 more