Journal ArticleDOI
Low frequency noise and DLTS as semiconductor device characterization tools
TLDR
In this article, the authors used low frequency noise vs temperature measurements for determining generation recombination (G.R.) trapping parameters in MOSFETs in a manner similar to that of Deep Level Transient Spectroscopy (DLTS).Abstract:
The technique of low frequency noise vs temperature measurements is shown to be a powerful diagnostic technique for determining Generation Recombination (G.R.) trapping parameters in MOSFETS. From computer controlled measurements of low frequency noise vs temperature, the trapping parameters are extracted in a manner similar to that of Deep Level Transient Spectroscopy (DLTS). The trapping parameters are also extracted by curve fitting of the low frequency noise vs temperature curves. These noise-determined trapping parameters are compared with those measured by DLTS. The agreement between parameters determined by the spot frequency noise Arrhenius plot with those determined by DLTS is close, while the agreement between those determined by noise curve fitting is reasonable for noise peaks near room temperature, but becomes poor for low temperature noise peaks. We have found that the low frequency noise vs temperature technique appears to show higher sensitivity than our DLTS measurements. By the use of PECVD silicon nitride as a passivation material, the sensitivity to measure G.R. traps by the low frequency noise vs temperature technique can be increased. This improved sensitivity is due to the reduction of interface state noise. The PECVD silicon nitride passivation had no effect on reducing the G.R. noise peaks thus indicating that these traps are probably located in the bulk space-charge region.read more
Citations
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Journal ArticleDOI
Low-frequency electronic noise in single-layer MoS2 transistors.
Vinod K. Sangwan,Heather N. Arnold,Deep Jariwala,Tobin J. Marks,Lincoln J. Lauhon,Mark C. Hersam +5 more
TL;DR: Low-frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors is quantitatively investigated, revealing the significant influence of atmospheric adsorbates on charge transport.
Journal ArticleDOI
Low-frequency noise spectroscopy
TL;DR: In this paper, the authors used spectroscopy to identify the defect and measure its properties, and the value of the technique for many systems is described, and comparison is made with other methods of studying such defects.
Book ChapterDOI
Electrical Noise as a Measure of Quality and Reliability in Electronic Devices
TL;DR: This chapter is devoted to an account of the success that has been obtained in using noise as a nondestructive indicator of reliability.
Journal ArticleDOI
Low-frequency noise properties of N-p-n AlGaAs/GaAs heterojunction bipolar transistors
D. Costa,James S. Harris +1 more
TL;DR: In this article, the authors investigated the low-frequency noise characteristics of N-p-n Al/sub x/Ga/sub 1-x/As/GaAs heterojunction bipolar transistors (HBTs) as a function of bias current, device geometry, extrinsic-base-surface condition, Al mole fraction in the emitter, and temperature.
Journal ArticleDOI
Low frequency noise in polysilicon‐emitter bipolar junction transistors
TL;DR: In this article, experimental results on low frequency noise in several types of polysilicon-emitter NPN bipolar junction transistors were described, and the experimental data were modelled using a combination of 1/f noise, generation-recombination noise (g•r), and shot noise, and good agreement between model calculations and experimental measurements were obtained.
References
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Journal ArticleDOI
Capacitance Transient Spectroscopy
Journal ArticleDOI
A study of grown-in impurities in silicon by deep-level transient spectroscopy
TL;DR: In this article, the largest impurity-induced deep-level concentration, defined as the electrically active impurity concentration, is found to be a fraction of the metallurgical impurity content of the crystals.
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