Low-voltage pentacene field-effect transistors with ultrathin polymer gate dielectrics
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TLDR
In this paper, an organic field effect transistors (OFET) for lowvoltage operation has been realized with conventional polymer gate dielectrics such as polyimides and cross-linked poly-4-vinyl phenols (PVPs) by fabricating ultrathin films.Abstract:
Organic field-effect transistors (OFETs) for low-voltage operation have been realized with conventional polymer gate dielectrics such as polyimides and cross-linked poly-4-vinyl phenols (PVPs) by fabricating ultrathin films. These ultrathin polymers (thickness ∼10nm) have shown good insulating properties, including high breakdown fields (>2.5MV∕cm). With ultrathin dielectrics, high capacitances (>250nF∕cm2) have been achieved, allowing operation of OFETs within −3V. Pentacene OFETs with ultrathin PVP dielectrics exhibit a mobility of 0.5cm2∕Vs, an on-off ratio of 105, and a small subthreshold swing of 174mV∕decade when devices are operated at −3V.read more
Citations
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References
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Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
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High-mobility polymer gate dielectric pentacene thin film transistors
TL;DR: In this article, a spin-coated polymer gate dielectric layer was used to obtain a polyvinylphenol-based copolymer-based transistor with a carrier mobility as large as 3 cm2/V's and sub-threshold swing as low as 0.5 V/decade.
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Gate Insulators in Organic Field-Effect Transistors
TL;DR: In this article, the authors reviewed recent progress in the understanding of insulator/semiconductor interfaces in organic field effect transistors (OFETs) and emphasized that the choice of gate insulator is as important for high-quality OFET devices as the semiconductor itself, especially because of the unique transport mechanisms operating in them.
Journal ArticleDOI
Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate Insulators
Christos D. Dimitrakopoulos,Sampath Purushothaman,J. Kymissis,Alessandro C. Callegari,Jane Margaret Shaw +4 more
TL;DR: An all-room-temperature fabrication process sequence was used, which enabled the demonstration of high-performance organic IGFETs on transparent plastic substrates, at low operating voltages for organic devices.
Journal ArticleDOI
Low-voltage organic transistors with an amorphous molecular gate dielectric
Marcus Halik,Hagen Klauk,Ute Zschieschang,Günter Schmid,Christine Dehm,Markus Dr. Schütz,Steffen Maisch,Franz Effenberger,Markus Brunnbauer,Francesco Stellacci +9 more
TL;DR: This work demonstrates a manufacturing process for TFTs with a 2.5-nm-thick molecular self-assembled monolayer (SAM) gate dielectric and a high-mobility organic semiconductor (pentacene), which operate with supply voltages of less than 2 V yet have gate currents that are lower than those of advanced silicon field-effect transistors with SiO2 dielectrics.