Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections

TLDR: In this article, high-quality gallium nitride nanowires have been synthesized via metal-initiated metalorganic chemical vapor deposition for the first time, and excellent substrate coverage was observed for wires prepared on silicon, c-plane, and a-plane sapphire substrates.

Abstract: High-quality gallium nitride nanowires have been synthesized via metal-initiated metalorganic chemical vapor deposition for the first time. Excellent substrate coverage was observed for wires prepared on silicon, c-plane, and a-plane sapphire substrates. The wires were formed via the vapor−liquid−solid mechanism with gold, iron, or nickel as growth initiators and were found to have widths of 15-200 nm. Transmission electron microscopy confirmed that the wires were single-crystalline and were oriented predominantly along the [210] or [110] direction. Wires growing along the [210] orientation were found to have triangular cross-sections. Transport measurements confirmed that the wires were n-type and had electron mobilities of ∼65 cm2/V·s. Photoluminescence measurements showed band edge emission at 3.35 eV (at 5 K), with a marked absence of low-energy emission from impurity defects.