MIS capacitance and derivative of capacitance, with application to nonparabolic band semiconductors☆

TLDR: Theoretical capacitance and derivative of capacitance curves for an MIS structure with a semiconductor having a nonparabolic conduction band and a parabolic valence band are calculated for single level trap, uniform and nonuniform surface state distributions in this paper.

Abstract: Theoretical capacitance ( C - V ) and derivative of capacitance ( C ′- V ) curves for an MIS structure with a semiconductor having a nonparabolic conduction band and a parabolic valence band are calculated for single level trap, uniform and nonuniform surface state distributions. The Kane model is used to describe the nonparabolic conduction band. The effects of varying the hole effective mass, Kane matrix element, temperature, surface state densities (both donor and acceptor types), and the degeneracy factors for the surface states is examined. The computed results are based on Hg 0·8 Cd 0·2 TeZnS device parameters.