Journal ArticleDOI
Molecular beam epitaxial growth effects on type-II antimonide lasers and photodiodes
C. L. Canedy,J. Abell,William W. Bewley,Edward H. Aifer,Chul Soo Kim,Jill A. Nolde,Mijin Kim,Joseph G. Tischler,James R. Lindle,Eric M. Jackson,Igor Vurgaftman,Jerry R. Meyer +11 more
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In this paper, the authors studied how growth temperature and As flux affect the integrated intensity and linewidth of low-temperature photoluminescence spectra emitted from ICL active regions.Abstract:
Two important classes of electro-optical devices, midwave-infrared interband cascade lasers (ICLs) and long-wave infrared photodiodes, employ type-II antimonide active regions grown by molecular beam epitaxy (MBE). The authors have studied how growth temperature and As flux affect the integrated intensity and linewidth of low-temperature photoluminescence spectra emitted from ICL active regions. Possible ramifications for defect-assisted Auger processes are discussed, and experimental Auger coefficients are extracted from the measured ICL thresholds and slope efficiencies. They also demonstrate that the effective dynamic impedance of a type-II photodiode with graded-gap depletion region is quite sensitive to the doping level in the absorber. Majority acceptor concentration is a key design parameter that must be carefully controlled in the MBE growth.read more
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Journal ArticleDOI
Interband cascade lasers
I. Vurgaftman,Robert Weih,Martin Kamp,Jerry R. Meyer,Chadwick L. Canedy,Chul Soo Kim,M. Kim,William W. Bewley,Charles D. Merritt,J. Abell,Sven Höfling,Sven Höfling +11 more
TL;DR: In this paper, the authors review the current status of interband cascade lasers (ICLs) emitting in the mid-wave infrared (IR) and discuss theoretical aspects of the active region and core designs, growth by molecular beam epitaxy, and the processing of broad-area, narrow-ridge, and distributed feedback (DFB) devices.
Book ChapterDOI
Type-II Superlattice Infrared Detectors
David Z.-Y. Ting,Alexander Soibel,Linda Höglund,Jean Nguyen,Cory J. Hill,Arezou Khoshakhlagh,Sarath D. Gunapala +6 more
TL;DR: The type-II InAs/GaSb superlattices have several fundamental properties that make them suitable for infrared detection: (1) their band gaps can be made arbitrarily small by design, (2) they are more immune to band-to-band tunneling compared with bulk material, and (3) the judicious use of strain in type-I As/GaInSb strained layer super-lattice (SLS) can enhance its absorption strength to a level comparable with HgVdTe (MCT), and (4) type
Journal ArticleDOI
Interband Cascade Lasers With Low Threshold Powers and High Output Powers
Igor Vurgaftman,William W. Bewley,Chadwick L. Canedy,Chul Soo Kim,Mijin Kim,Charles D. Merritt,J. Abell,Jerry R. Meyer +7 more
TL;DR: In this article, the mid-wave infrared interband cascade laser (ICL) can operate at threshold power densities 30 times lower than those of the quantum cascade laser at wavelengths from 2.9 to 5.5 μm.
Book ChapterDOI
Interband cascade (IC) lasers
TL;DR: In this paper, the authors discuss relevant concepts, material systems, quantum well structures, and physical processes involved in interband cascade (IC) lasers, reviewing their development from original concept to practical devices.
Journal ArticleDOI
Threading and Near-Surface Dislocations in InGaSb/AlSb Films with Blocking and Anti-Blocking Layers
TL;DR: In this paper, an AlSb blocking layer was grown within the buffer layer to mitigate the formation of threading dislocations in an In0.1Ga0.9Sb heteroepitaxial buffer layer.
References
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Journal ArticleDOI
A high-performance long wavelength superlattice complementary barrier infrared detector
David Z.-Y. Ting,Cory J. Hill,Alexander Soibel,Sam A. Keo,Jason M. Mumolo,Jean Nguyen,Sarath D. Gunapala +6 more
TL;DR: In this paper, the authors describe a long wavelength infrared detector where an InAs/GaSb superlattice absorber is surrounded by a pair of electron-blocking and hole-blocking unipolar barriers.
Journal ArticleDOI
Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier
TL;DR: In this article, the authors presented an alternative design of type II superlattice photodiodes with the insertion of a mid-wavelength infrared M-structure AlSb∕GaSb ∕InAs∕GASb ∼AlSb, which has a larger carrier effective mass and a greater band discontinuity as compared to the standard type II Superlattices at the valence band.
Journal ArticleDOI
Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes
Igor Vurgaftman,Edward H. Aifer,Chadwick L. Canedy,Joseph G. Tischler,Jerry R. Meyer,Jeffrey H. Warner,Eric M. Jackson,G. Hildebrandt,G. J. Sullivan +8 more
TL;DR: In this paper, a W-structured type-II superlattice photodiode design, with graded band gap in the depletion region, is shown to strongly suppress dark currents due to tunneling and generation-recombination processes.
Journal ArticleDOI
Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells
Jerry R. Meyer,Christopher L. Felix,William W. Bewley,Igor Vurgaftman,Edward H. Aifer,Linda J. Olafsen,James R. Lindle,Craig A. Hoffman,M. J. Yang,Brian R. Bennett,B. V. Shanabrook,H. Lee,C.H. T. Lin,Shin-Shem Pei,R. H. Miles +14 more
TL;DR: In this article, two different approaches, a photoconductive response technique and a correlation of lasing thresholds with theoretical threshold carrier concentrations have been used to determine Auger lifetimes in InAs/GaInSb quantum wells.
Journal ArticleDOI
Surface Reconstruction Phase Diagrams for InAs, AlSb, and GaSb
TL;DR: In this paper, experimental flux-temperature phase diagrams for surface reconstruction transitions on the 6.1As compound semiconductors were presented for both cracked and uncracked Group V species.