Journal ArticleDOI
Nature of current and of forward-bias electroluminescence excess noise in GaAs-diodes
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TLDR
In this paper, the excess fluctuations of the direct current and of the forward-bias electroluminescence intensity in GaAs-diodes have been investigated, and it has been shown that the current noise in type I samples as well as in the wide current range in type II samples is generated in the space charge region of diodes.Abstract:
The excess fluctuations of the direct current and of the forward-bias electroluminescence intensity in GaAs-diodes have been investigated. The diodes of two types have been studied: the samples doped by non-amphoteric impurities (type I diodes) and the samples doped by non-amphoteric together with amphoteric impurities (type II diodes). The current noise in type I samples as well as in the wide current range in type II samples is shown to be generated in the space charge region of diodes. These noises are as a matter of fact the fluctuations of the excess component of the whole current which is likely to pass through some ‘peculiar’ regions of p - n -junctions rather than through the whole area. The current noise observed in type II diodes at sufficiently large currents is due to the fluctuations of the resistance of the compensation region of the diode or due to the fluctuations of its contact resistance. The excess electroluminescence noise in all diodes investigated has been found to be connected with the above-mentioned fluctuations of the excess component of the whole current and in the type II samples the over-barrier electron flow responsible for the electroluminescence passing probably through the same ‘peculiar’ regions of p - n -junction as the excess current does.read more
Citations
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References
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Journal ArticleDOI
Physical model for burst noise in semiconductor devices
TL;DR: In this paper, a physical model for burst noise in p−n junction devices is presented, where burst noise results when the current through a defect is modulated by a change in the charge state of a single recombination-generation center located adjacent to the defect.
Journal ArticleDOI
Properties of Gallium Arsenide Diodes between 4.2° and 300°K
D. J. Dumin,G. L. Pearson +1 more
TL;DR: In this article, the currentvoltage characteristics of zinc-diffused gallium arsenide diodes have been measured between 4.2° and 300°K, with carrier concentrations in the n-type region varying from 6×1015 to 9×1018 cm−3.
Journal ArticleDOI
Excess Noise in Narrow Germanium p-n Junctions
Tatsuo Yajima,Leo Esaki +1 more
TL;DR: Excess noise has been studied on narrow alloyed p-n junctions fabricated on heavily doped p-type and n-type germanium with less than 200 A junction width, which exhibit inverted rectification and negative resistance in the forward direction as mentioned in this paper.
Journal ArticleDOI
Surface state related 1f noise in p-n junctions
TL;DR: In this article, it was shown that the noise power of gate-controlled diodes is proportional to the product of the density of these surface states and the square of the transconductance, defined as the incremental change in forward current with gate bias.
Journal ArticleDOI
Fluctuations in Luminescent Junctions
TL;DR: In this paper, optical emission fluctuations from three types of GaAs and Ga(AsP) p−n junction luminescent diodes have been examined and a correlation exists between optical emission noise and forward current noise, suggesting that carrier transitions responsible for both effects are the same.