Journal ArticleDOI
Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy
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TLDR
In this article, a GaN/AlN multiple-quantum well structure was grown by molecular beam epitaxy and absorption measurements indicated that intersubband absorptions occurred at wavelengths of 1.3-2.2 μm.Abstract:
GaN/AlN multiple-quantum-well structures were grown by molecular beam epitaxy. Abrupt interfaces and good periodicity were confirmed. Absorption measurements indicated that intersubband absorptions occurred at wavelengths of 1.3–2.2 μm. Spectral fits by Lorentzians suggested that the well thicknesses fluctuated by two monolayers. The linewidths of the individual fits were as narrow as 80–120 meV. The characteristics of the absorption saturation were investigated at a wavelength of 1.46 μm. A relaxation time of 400 fs and saturation energy density of 0.5 pJ/μm2 were obtained. These results are promising for realizing ultrafast optical switches with energy consumption of the picojoule order.read more
Citations
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Journal ArticleDOI
Epsilon-near-zero Al-doped ZnO for ultrafast switching at telecom wavelengths
Nathaniel Kinsey,Clayton DeVault,Jongbum Kim,Marcello Ferrera,Vladimir M. Shalaev,Alexandra Boltasseva +5 more
TL;DR: The first epsilon-near-zero aluminum-doped zinc oxide (AZO) thin films that simultaneously exhibit ultrafast carrier dynamics (excitation and recombination time below 1ps) and an outstanding reflectance modulation up to 40% for very low pump fluence levels at a telecom wavelength of 1.3μm were presented in this article.
Journal ArticleDOI
Systematic experimental and theoretical investigation of intersubband absorption in Ga N ∕ Al N quantum wells
Maria Tchernycheva,Laurent Nevou,L. Doyennette,François H. Julien,E. Warde,Fabien Guillot,Eva Monroy,Edith Bellet-Amalric,T. Remmele,Martin Albrecht +9 more
TL;DR: In this paper, the authors studied the electronic confinement in hexagonal (1.33 -1.91)-1.5-1.3-μm hexagonal quantum well by means of high-resolution x-ray diffraction and transmission electron microscopy.
Journal ArticleDOI
Epsilon-Near-Zero Al-Doped ZnO for Ultrafast Switching at Telecom Wavelengths: Outpacing the Traditional Amplitude-Bandwidth Trade-Off
Nathaniel Kinsey,Clayton DeVault,Vladimir M. Shalaev,Alexandra Boltasseva,Marcello Ferrera,J. Kim +5 more
TL;DR: In this article, an all-optical aluminum doped zinc oxide (AZO)-based plasmonic modulator achieving 3 dB modulation in 7.5 µm and operating at THz frequencies is numerically demonstrated.
Journal ArticleDOI
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
P. K. Kandaswamy,Fabien Guillot,Edith Bellet-Amalric,Eva Monroy,Laurent Nevou,Maria Tchernycheva,Adrien Michon,François H. Julien,Esther Baumann,Fabrizio R. Giorgetta,Daniel Hofstetter,T. Remmele,Martin Albrecht,Stefan Birner,Le Si Dang +14 more
TL;DR: In this article, the effect of growth and design parameters on the performance of Si-doped GaN/AlN multiquantum-well (MQW) structures for inter-band optoelectronics in the near infrared was studied.
Journal ArticleDOI
Femtosecond all-optical devices for ultrafast communication and signal processing
TL;DR: In this paper, the authors review requirements of ultrafast all-optical devices and recent progress in ultrafast light sources and switches based on either novel device principles or ultrafast phenomena in novel materials such as quantum-confined nanostructures.
References
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Journal ArticleDOI
Quantum‐well infrared photodetectors
TL;DR: The literature on quantum-well infrared photodetectors (QWIPs) is reviewed in this paper, where a detailed discussion is given on the device physics of the intersubband absorption and hot-carrier transport processes for individual detectors, as well as the high performance which has been achieved for large staring arrays.
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Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
TL;DR: In this paper, a wide, well-doped GaN/AlGaN multiple quantum well (MQW) with high, 85% AlN mole-fraction barriers was constructed and the resulting electron Bragg confinement allowed peak absorption wavelengths as short as 1.52 μm.
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Ultrafast intersubband relaxation (⩽150 fs) in AlGaN/GaN multiple quantum wells
TL;DR: In this paper, the authors verified the ultrafast intersubband relaxation in GaN quantum wells and obtained an ultrashort relaxation time of less than 150 fs at a wavelength of 4.5 μm.
Journal ArticleDOI
Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µ m Intersubband Transition in AlGaN/GaN Quantum Wells
Nobuo Suzuki,Norio Iizuka +1 more
TL;DR: The feasibility of the intersubband transition (ISBT) in Al(Ga)N/GaN quantum wells (QWs) as a device mechanism for ultrafast optical switches is theoretically investigated.
Journal ArticleDOI
Sub-picosecond electron scattering time for ≃ 1.55 [micro sign]m intersubband transitions in GaN/AlGaN multiple quantum wells
TL;DR: In this article, the authors used the time-resolved pump-and-probe technique, with 1.55 µm pump and 1.70 µm probe wavelength, for the measurement of an intersubband electron scattering time of 370 fs.