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Journal ArticleDOI

New Magnetic Anisotropy

W. H. Meiklejohn, +1 more
- 01 Jun 1956 - 
- Vol. 105, Iss: 3, pp 904-913
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TLDR
In this article, a new type of magnetic anisotropy was discovered which is best described as an exchange anisotropic, which is the result of an interaction between an antiferromagnetic material and a ferromagnetic materials.
Abstract
A new type of magnetic anisotropy has been discovered which is best described as an exchange anisotropy. This anisotropy is the result of an interaction between an antiferromagnetic material and a ferromagnetic material. The material that exhibits this exchange anisotropy is a compact of fine particles of cobalt with a cobaltous oxide shell. The effect occurs only below the N\'eel temperature of the antiferromagnetic material, which is essentially room temperature for the cobaltous oxide. An exchange torque is inferred to exist between the metal and oxide which has a maximum value at 77\ifmmode^\circ\else\textdegree\fi{}K of \ensuremath{\sim}2 dyne-cm/${\mathrm{cm}}^{2}$ of interface.

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Journal ArticleDOI

Ferromagnetic resonance study of Permalloy/Cu/Co/NiO spin valve system

TL;DR: In this paper, the magnetic coupling between Permalloy and Co is found to be ferromagnetic with effective magnetic coupling parameter values increasing from 0.05 to 0.1 ǫerg/cm2 as the interlayer Cu thickness decreases from 10 to 2 nm.
Journal ArticleDOI

All-Oxide Nanocomposites to Yield Large, Tunable Perpendicular Exchange Bias above Room Temperature.

TL;DR: The results demonstrate that proper choice of the phases and careful strain engineering and nanostructure engineering makes oxide nanocomposites strong potential candidate systems for next generation spintronic devices.
Patent

Exchange-Bias Based Multi-State Magnetic Memory And Logic Devices And Magnetically Stabilized Magnetic Storage

TL;DR: Magnetic materials and methods for using ferromagnetic and antiferromagnetic coupling and exchange bias for binary and multistate magnetic memory device were discussed in this article, where the authors proposed a method for using magnetometer-based magnetic memory devices.
Patent

Magnetic device and method for locally controllably altering magnetization direction

TL;DR: In this article, a device and method for controllably locally altering the magnetization direction in a body of magnetic material, whereby a layer of at least one of non-metallic material and a semi-metric material is disposed on a surface of the body, on which layer is provided a body having a fixed magnetisation direction, and the nature of this magnetic coupling being locally alterable by means of locally subjecting the layer to a controllable electric field.
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