Journal ArticleDOI
Optical doping of waveguide materials by MeV Er implantation
TLDR
In this paper, MeV erbium ion implantation into micron-thick silica and phosphosilicate glass films and 1200-Athick Si3N4 films was studied with the aim of incorporating the rare earth dopant on an optically active site in the network.Abstract:
Implantation of MeV erbium ions into micron‐thick silica and phosphosilicate glass films and 1200‐A‐thick Si3N4 films is studied with the aim of incorporating the rare‐earth dopant on an optically active site in the network. Implantation energies and fluences range from 500 keV to 3.5 MeV and 3.8×1015 to 9.0×1016 ions/cm2. After proper thermal annealing, all implanted films show an intense and sharply peaked photoluminescence spectrum centered around λ = 1.54 μm. The fluorescence lifetime ranges from 6 to 15 ms for the silica‐based glasses, depending on annealing treatment and Er concentration. Silicon nitride films show lower lifetimes, in the range <0.2–7 ms. Annealing characteristics of all materials are interpreted in terms of annealing of ion‐induced network defects. These defects are identified using photoluminescence spectroscopy at 4.2 K. Concentration quenching, diffusion and precipitation behavior of Er is also studied.read more
Citations
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Journal ArticleDOI
Erbium implanted thin film photonic materials
TL;DR: The role of implantation defects, the effect of annealing, concentration dependent effects, and optical activation are discussed and compared for different Er-doped thin film photonic materials.
Journal ArticleDOI
Rare-earth doped polymers for planar optical amplifiers
Lenneke H. Slooff,A. van Blaaderen,Albert Polman,Gerald A. Hebbink,Stephen I. Klink,F.C.J.M. van Veggel,David N. Reinhoudt,J.W. Hofstraat +7 more
TL;DR: In this paper, two different approaches to dope a polymer waveguide with rare-earth ions are presented, one based on organic cage-like complexes that encapsulate the rare earth ion and the other based on Er-doped silica colloidal spheres.
Journal ArticleDOI
Broadband sensitizers for erbium-doped planar optical amplifiers: review
TL;DR: In this paper, three different broadband sensitization concepts for optically active erbium ions are reviewed: silicon nanocrystals, with absorption over the full visible spectrum, efficiently couple their excitonic energy to Er3+, silver-related defect states in sodalime silicate glass, and organic cage complexes coordinated with well-chosen chromophores serve as broadband sensitizers in the visible.
Journal ArticleDOI
Optical properties of erbium-doped organic polydentate cage complexes
Lenneke H. Slooff,Albert Polman,M.P. Oude Wolbers,F.C.J.M. van Veggel,David N. Reinhoudt,J.W. Hofstraat +5 more
TL;DR: In this paper, the optical properties of different Er-doped polydentate hemispher and organic cage complexes are studied, for use in polymer-based planar optical amplifiers.
Journal ArticleDOI
Photoluminescence characterization of Er-implanted Al2O3 films
van den Gn Gerlas Hoven,E. Snoeks,Albert Polman,van Jwm Uffelen,YS Yok-Siang Oei,MK Meint Smit +5 more
TL;DR: In this article, Al2O3 films on oxidized Si substrates were implanted with 800 keV Er ions to peak concentrations ranging from 0.01 to 1 at, with only moderate concentration quenching effects.
References
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Journal ArticleDOI
Low-noise erbium-doped fibre amplifier operating at 1.54μm
TL;DR: In this paper, a 3m-long erbium-doped fiber was used for high gain amplification of up to 28 dB at a bit rate of 140 Mbit/s.
Journal ArticleDOI
Aluminum or phosphorus co-doping effects on the fluorescence and structural properties of neodymium-doped silica glass
TL;DR: In this paper, the effect of co-dopant oxide on the properties of SiO2 glass for a glass laser host was studied. And the effects of the Al dopant on the density and Raman spectra were also studied to obtain structural information.
Journal ArticleDOI
1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
TL;DR: In this article, well-resolved sharply structured luminescence spectra at 1.54 μm were observed in erbium-implanted GaP, GaAs, InP, and Si. The optical transitions occur between the weakly crystal field split spin-orbit levels, 4I13/2→4I15/2, of Er3+(4f11).
Journal ArticleDOI
High-gain erbium-doped traveling-wave fiber amplifier
TL;DR: In this paper, a lambda = 1.53 microm signal with +22 dB gain was achieved at 295 K in an Er(3+)-doped single-mode fiber using a Lambda = 514.5 nm pump source.