Journal ArticleDOI
Optical Enhancement of Silicon Heterojunction Solar Cells With Hydrogenated Amorphous Silicon Carbide Emitter
Dong Zhang,Dimitrios Deligiannis,Georgios Papakonstantinou,René A. C. M. M. van Swaaij,Miro Zeman +4 more
TLDR
In this article, the electrical and optical properties of p-type hydrogenated amorphous silicon carbide (a-SiC:H) are compared with p-Type H-Si:H emitter material of silicon heterojunction solar cells.Abstract:
In this paper, the electrical and optical properties of p-type hydrogenated amorphous silicon carbide (a-SiC:H) are compared with p-type hydrogenated amorphous silicon (a-Si:H) widely used as emitter material of silicon heterojunction solar cells. The difference in solar-cell performance of the two emitters shows that p-type a-SiC:H emitter is able to enhance the short-circuit current density (J
sc
) by reducing the parasitic absorption loss and reflection loss without degrading the electrical performance of devices. The application of the p-type a-SiC:H emitter can lead to a J
sc
increase of about 1 mA/cm
2
, compared with the p-type a-Si:H emitter. Our silicon heterojunction solar cell with p-type a-SiC:H emitter shows an active-area efficiency of 20.8% and the short-circuit current density of 40.3 mA/cm
2
.read more
Citations
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Journal ArticleDOI
23.5%-efficient silicon heterojunction silicon solar cell using molybdenum oxide as hole-selective contact
Julie Dreon,Quentin Jeangros,Jean Cattin,Jan Haschke,Luca Antognini,Christophe Ballif,Mathieu Boccard +6 more
TL;DR: In this paper, the influence of the MoOx and intrinsic a-Si:H thicknesses on current-voltage properties and discuss transport and performance-loss mechanisms is discussed. But the authors focus on the front-side hole-selective layer.
Journal ArticleDOI
Silicon heterojunction solar cells: Recent technological development and practical aspects - from lab to industry
TL;DR: In this article, the authors review the recent progress of silicon heterojunction (SHJ) solar cells and emphasize the importance of minimised recombination, not only to reach high open-circuit voltages, but also high fill-factor.
Journal ArticleDOI
Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells
TL;DR: In this paper, the authors investigate the use of intrinsic amorphous silicon carbide passivating layers to sidestep the issue of degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities.
Journal ArticleDOI
Valence band alignment and hole transport in amorphous/crystalline silicon heterojunction solar cells
TL;DR: In this paper, hole transport in amorphous/crystalline silicon heterojunctions was investigated using silicon suboxide films with varying band offsets, which enable good passivation if covered by a doped silicon layer.
Journal ArticleDOI
Infrared photocurrent management in monolithic perovskite/silicon heterojunction tandem solar cells by using a nanocrystalline silicon oxide interlayer
Luana Mazzarella,Matteo Werth,Klaus Jäger,Marko Jošt,Lars Korte,Steve Albrecht,Rutger Schlatmann,Bernd Stannowski +7 more
TL;DR: Optical simulations using hydrogenated nanocrystalline silicon oxide (nc-SiOx:H) as n-doped interlayer in monolithic perovskite/c-Si heterojunction tandem solar cells allows to optically manage the infrared light absorption in the c-Si bottom cell minimizing reflection losses.
References
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Journal ArticleDOI
24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer
Mikio Taguchi,Ayumu Yano,Satoshi Tohoda,Kenta Matsuyama,Yuya Nakamura,Takeshi Nishiwaki,Fujita Kazunori,Eiji Maruyama +7 more
TL;DR: In this article, a new record conversion efficiency of 24.7% was achieved at the research level by using a heterojunction with intrinsic thin-layer structure of practical size at a 98-μm thickness.
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TL;DR: In this paper, a Kramers-Kronig consistent analytical expression was developed to fit the measured optical functions of hydrogenated amorphous silicon (a-Si:H) based alloys, i.e., the real and imaginary parts of the dielectric function (e1,e2) versus photon energy E for the alloys.
Journal ArticleDOI
Current Losses at the Front of Silicon Heterojunction Solar Cells
Zachary C. Holman,Antoine Descoeudres,L. Barraud,Fernando Zicarelli Fernandez,Johannes P. Seif,S. De Wolf,Christophe Ballif +6 more
TL;DR: In this paper, the current losses due to parasitic absorption in the indium tin oxide (ITO) and amorphous silicon (a-Si:H) layers at the front of silicon heterojunction solar cells are isolated and quantified.
Journal ArticleDOI
Practical doping principles
TL;DR: Theoretical investigations of doping of several wide-gap materials suggest a number of rather general, practical "doping principles" that may help guide experimental strategies for overcoming doping bottlenecks as discussed by the authors.
Journal ArticleDOI
Nature of doped a-Si:H / c-Si interface recombination
Stefaan De Wolf,Michio Kondo +1 more
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