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Journal ArticleDOI

Optical modeling of plasma-deposited ZnO films: Electron scattering at different length scales

TLDR
In this article, an optical modeling study on electron scattering mechanisms in plasma-deposited ZnO layers is presented, where the Drude oscillator is adopted to represent the free-electron contribution and the obtained optical mobility can be then correlated with the macroscopic material properties.
Abstract
In this work, an optical modeling study on electron scattering mechanisms in plasma-deposited ZnO layers is presented. Because various applications of ZnO films pose a limit on the electron carrier density due to its effect on the film transmittance, higher electron mobility values are generally preferred instead. Hence, insights into the electron scattering contributions affecting the carrier mobility are required. In optical models, the Drude oscillator is adopted to represent the free-electron contribution and the obtained optical mobility can be then correlated with the macroscopic material properties. However, the influence of scattering phenomena on the optical mobility depends on the considered range of photon energy. For example, the grain-boundary scattering is generally not probed by means of optical measurements and the ionized-impurity scattering contribution decreases toward higher photon energies. To understand this frequency dependence and quantify contributions from different scattering phenomena to the mobility, several case studies were analyzed in this work by means of spectroscopic ellipsometry and Fourier transform infrared (IR) spectroscopy. The obtained electrical parameters were compared to the results inferred by Hall measurements. For intrinsic ZnO (i-ZnO), the in-grain mobility was obtained by fitting reflection data with a normal Drude model in the IR range. For Al-doped ZnO (Al:ZnO), besides a normal Drude fit in the IR range, an Extended Drude fit in the UV-vis range could be used to obtain the in-grain mobility. Scattering mechanisms for a thickness series of Al:ZnO films were discerned using the more intuitive parameter “scattering frequency” instead of the parameter “mobility”. The interaction distance concept was introduced to give a physical interpretation to the frequency dependence of the scattering frequency. This physical interpretation furthermore allows the prediction of which Drude models can be used in a specific frequency range.

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Journal ArticleDOI

Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

TL;DR: The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported and a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect.
Journal ArticleDOI

Electron Scattering and Doping Mechanisms in Solid-Phase-Crystallized In2O3:H Prepared by Atomic Layer Deposition

TL;DR: It can be concluded that inactive H atoms do not (significantly) contribute to defect scattering, which potentially explains why In2O3:H films are capable of achieving a much higher carrier mobility than conventional In2 O3:Sn (ITO).
Journal ArticleDOI

Electrical transport and Al doping efficiency in nanoscale ZnO films prepared by atomic layer deposition

TL;DR: In this paper, the structural, electrical, and optical properties as well as chemical bonding state of Al-doped ZnO films deposited by atomic layer deposition have been investigated to obtain insight into the doping and electrical transport mechanisms in the films.
Journal ArticleDOI

Atomic layer deposition of high-mobility hydrogen-doped zinc oxide

TL;DR: In this paper, atomic layer deposition (ALD) has been employed to prepare high-mobility H-doped zinc oxide (ZnO:H) films Hydrogen doping was achieved by interleaving the ZnO ALD cycles with H2 plasma treatments.
Journal ArticleDOI

Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature

TL;DR: In this paper, the growth of zinc oxide films by direct plasma-enhanced atomic layer deposition at near room temperature was reported, where Diethyl zinc and oxygen plasma were used as the precursor and coreactant, respectively.
References
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Book

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TL;DR: In this paper, the authors present a survey of optical spectra of Elemental Metal Clusters and Chain Aggregates and discuss experimental results and experimental methods for metal clustering experiments.
Journal ArticleDOI

Fundamentals of zinc oxide as a semiconductor

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Journal ArticleDOI

The electrical properties of polycrystalline silicon films

TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
Journal ArticleDOI

Evaporated Sn‐doped In2O3 films: Basic optical properties and applications to energy‐efficient windows

TL;DR: In this paper, the authors reviewed work on In2O3:Sn films prepared by reactive e−beam evaporation of In2 O3 with up to 9 mol'% SnO2 onto heated glass.
Journal ArticleDOI

Past achievements and future challenges in the development of optically transparent electrodes

TL;DR: In this article, the authors compared carbon nanotube, metal nanowire networks, and regular metal grids with the usual transparent conductive oxides for optically transparent electrode applications.
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