Journal ArticleDOI
Optical modeling of plasma-deposited ZnO films: Electron scattering at different length scales
Harm C. M. Knoops,Bas W. H. van de Loo,Sjoerd Smit,M. V. Ponomarev,JW Jan-Willem Weber,K. Sharma,Wilhelmus M. M. Kessels,Mariadriana Creatore +7 more
TLDR
In this article, an optical modeling study on electron scattering mechanisms in plasma-deposited ZnO layers is presented, where the Drude oscillator is adopted to represent the free-electron contribution and the obtained optical mobility can be then correlated with the macroscopic material properties.Abstract:
In this work, an optical modeling study on electron scattering mechanisms in plasma-deposited ZnO layers is presented. Because various applications of ZnO films pose a limit on the electron carrier density due to its effect on the film transmittance, higher electron mobility values are generally preferred instead. Hence, insights into the electron scattering contributions affecting the carrier mobility are required. In optical models, the Drude oscillator is adopted to represent the free-electron contribution and the obtained optical mobility can be then correlated with the macroscopic material properties. However, the influence of scattering phenomena on the optical mobility depends on the considered range of photon energy. For example, the grain-boundary scattering is generally not probed by means of optical measurements and the ionized-impurity scattering contribution decreases toward higher photon energies. To understand this frequency dependence and quantify contributions from different scattering phenomena to the mobility, several case studies were analyzed in this work by means of spectroscopic ellipsometry and Fourier transform infrared (IR) spectroscopy. The obtained electrical parameters were compared to the results inferred by Hall measurements. For intrinsic ZnO (i-ZnO), the in-grain mobility was obtained by fitting reflection data with a normal Drude model in the IR range. For Al-doped ZnO (Al:ZnO), besides a normal Drude fit in the IR range, an Extended Drude fit in the UV-vis range could be used to obtain the in-grain mobility. Scattering mechanisms for a thickness series of Al:ZnO films were discerned using the more intuitive parameter “scattering frequency” instead of the parameter “mobility”. The interaction distance concept was introduced to give a physical interpretation to the frequency dependence of the scattering frequency. This physical interpretation furthermore allows the prediction of which Drude models can be used in a specific frequency range.read more
Citations
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Journal ArticleDOI
Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition
Chen-Hui Zhai,Rong-Jun Zhang,Xin Chen,Yu-Xiang Zheng,Songyou Wang,Juan Liu,Ning Dai,Liang-Yao Chen +7 more
TL;DR: The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported and a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect.
Journal ArticleDOI
Electron Scattering and Doping Mechanisms in Solid-Phase-Crystallized In2O3:H Prepared by Atomic Layer Deposition
TL;DR: It can be concluded that inactive H atoms do not (significantly) contribute to defect scattering, which potentially explains why In2O3:H films are capable of achieving a much higher carrier mobility than conventional In2 O3:Sn (ITO).
Journal ArticleDOI
Electrical transport and Al doping efficiency in nanoscale ZnO films prepared by atomic layer deposition
Y. Wu,PM Hermkens,van de Bwh Bas Loo,Hcm Harm Knoops,SE Stephen Potts,Marcel A. Verheijen,Fred Roozeboom,Wmm Erwin Kessels +7 more
TL;DR: In this paper, the structural, electrical, and optical properties as well as chemical bonding state of Al-doped ZnO films deposited by atomic layer deposition have been investigated to obtain insight into the doping and electrical transport mechanisms in the films.
Journal ArticleDOI
Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
Bart Macco,Harm C. M. Knoops,Harm C. M. Knoops,Marcel A. Verheijen,Wolfhard Beyer,Mariadriana Creatore,Wilhelmus M. M. Kessels +6 more
TL;DR: In this paper, atomic layer deposition (ALD) has been employed to prepare high-mobility H-doped zinc oxide (ZnO:H) films Hydrogen doping was achieved by interleaving the ZnO ALD cycles with H2 plasma treatments.
Journal ArticleDOI
Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
Julian Pilz,Alberto Perrotta,Paul Christian,Martin Tazreiter,Roland Resel,Günther Leising,Thomas Griesser,Anna Maria Coclite +7 more
TL;DR: In this paper, the growth of zinc oxide films by direct plasma-enhanced atomic layer deposition at near room temperature was reported, where Diethyl zinc and oxygen plasma were used as the precursor and coreactant, respectively.
References
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Book
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TL;DR: In this paper, the authors present a survey of optical spectra of Elemental Metal Clusters and Chain Aggregates and discuss experimental results and experimental methods for metal clustering experiments.
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