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Origin of trap assisted tunnelling in ammonia annealed SiC trench MOSFETs

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TLDR
In this article , the authors investigate the origin of TAT and GOX leakage in differently annealed gate oxides experimentally, using 4H-SiC trench MOSFETs, and theoretically, using density functional theory (DFT) simulations.
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This article is published in Microelectronics Reliability.The article was published on 2022-12-01 and is currently open access. It has received 2 citations till now. The article focuses on the topics: Silicon carbide & Quantum tunnelling.

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Temperature-dependent electroluminescence of a gate pulsed silicon carbide metal–oxide–semiconductor field-effect transistor: Insight into interface traps

TL;DR: In this article , the authors measured and analyzed the emitted light over a broad temperature range between 12 and 297 K. The energy spectrum of the emitted photons provided valuable information on the involved defects, located both at the 4H-SiC/SiO2 interface and in the 4h-SiCs bulk.
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Research on Interface Properties of Thermally Grown SiO2 and ALD SiO2 Stacked Structures

TL;DR: In this paper , a stacked process of thermal and atomic layer deposition (ALD) SiO2 was proposed to reduce the interface trap density of 4H-SiC metal-oxide-semiconductor (MOS) capacitors.
References
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Journal ArticleDOI

Fast parallel algorithms for short-range molecular dynamics

TL;DR: In this article, three parallel algorithms for classical molecular dynamics are presented, which can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors.

Fast parallel algorithms for short-range molecular dynamics

TL;DR: Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems.
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ReaxFF: A Reactive Force Field for Hydrocarbons

TL;DR: In this paper, a force field for large-scale reactive chemical systems (1000s of atoms) is proposed. But the force field does not have Coulomb and Morse potentials to describe nonbond interactions between all atoms.
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QUICKSTEP: Fast and accurate density functional calculations using a mixed Gaussian and plane waves approach

TL;DR: It is shown how derivatives of the GPW energy functional, namely ionic forces and the Kohn–Sham matrix, can be computed in a consistent way and the computational cost is scaling linearly with the system size, even for condensed phase systems of just a few tens of atoms.
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cp2k: atomistic simulations of condensed matter systems

TL;DR: The main capabilities of cp2k are summarized, and with recent applications the science cp2K has enabled in the field of atomistic simulation are illustrated.
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