Journal ArticleDOI
Oscillatory behaviour of resistivity with thickness in bismuth thin films
V. Damodara Das,N. Jayaprakash +1 more
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In this article, it was shown that resistivity oscillates with thickness both for unannealed and annealed films and that the same kind of oscillatory behaviour with thickness is also observed in the case of defect resistivity.About:
This article is published in Vacuum.The article was published on 1981-01-01. It has received 5 citations till now. The article focuses on the topics: Electrical resistivity and conductivity & Thin film.read more
Citations
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Lattice distortion energy spectra of as-grown bismuth thin films and their thickness dependence
V. Damodara Das,N. Jayaprakash +1 more
TL;DR: In this paper, the initial lattice distortion energy spectra of as-grown bismuth thin films have been evaluated and it is found that the defects have preferential activation energy values around 1.06 eV, 1.14 eV and 1.32 ev.
Morphological, Structural, and Compositional Characterization of Electrodeposited Bi(1-x)Sb(x) Nanowires
TL;DR: In this article, the influence of the electrolyte and the deposition potential on the electrochemical deposition of Bi$1-x}$Sb$_x$ nanowires in polymer templates made of polycarbonate (PC) and poly(ethylene terephthalate) (PET) was investigated.
Journal ArticleDOI
Variation of energy gap and resistivity minimum position with thickness in bismuth thin films
V. Damodara Das,S. Vaidehi +1 more
TL;DR: In this paper, Wismuth thin films of different thicknesses between about 20 and 225 nm are vacuum deposited at room temperature in a vacuum of 3 × 10−3 Pa. The films are heat-treated "in situ" and the resistances monitored.
Journal ArticleDOI
Manifestations of the quantum size effect in the electrochemical behaviour of thin bismuth films
TL;DR: In this paper, the photoemission current (j) and the differential capacitance of the double layer (C) on 20-200 nm thick bismuth films have been measured.
References
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Journal ArticleDOI
Quantum size effect in films and new methods for investigating the band structure of solids
V.N. Lutskii,T. N. Pinsker +1 more
TL;DR: In this paper, the locations of the extrema of the size subbands and of the Tamm surface states are calculated as functions of the film thickness and a new length R is introduced which characterizes the crystal surface properties.
Journal ArticleDOI
Study of quantum size effects by elastoresistance, thermoelectric power and conductivity measurements in Bi and BixSb1−x
TL;DR: In this paper, the existence of quantum size effects in thin films of Bi and BixSb1−x has been observed in measurements of the elastoresistance coefficient, the thermoelectric power and the conductivity.
Journal ArticleDOI
Anomalous variation of resistance in bismuth thin films and the effect of substrate temperature
V. Damodara Das,N. Jayaprakash +1 more
TL;DR: In this paper, the resistance of bismuth thin films of thickness 720 A have been vacuum deposited at various substrate temperatures on glass substrates and their resistances are recorded as a function of temperature after annealing the films at 200°C.
Journal ArticleDOI
The Role of Defects in the Quantum Size Effect
TL;DR: In this paper, the influence of defects in thin semimetal films on the electrical conductivity is explored by extending the work of Sandomirskiǐ to include a scattering potential of finite range.
Journal ArticleDOI
Oscillations in longitudinal magnetoresistance in single-crystal films of bismuth
Asha Lal,V.P. Duggal +1 more
TL;DR: In this paper, small amplitude oscillations in the longitudinal magnetoresistance of single-crystal bismuth films in weak magnetic fields at liquid nitrogen temperature, due to the influence of the magnetic field on size quantization.
Related Papers (5)
Semiconducting behavior of Ag2Te thin films and the dependence of band gap on thickness
V. Damodara Das,D. Karunakaran +1 more