Journal ArticleDOI
Anomalous variation of resistance in bismuth thin films and the effect of substrate temperature
V. Damodara Das,N. Jayaprakash +1 more
TLDR
In this paper, the resistance of bismuth thin films of thickness 720 A have been vacuum deposited at various substrate temperatures on glass substrates and their resistances are recorded as a function of temperature after annealing the films at 200°C.About:
This article is published in Vacuum.The article was published on 1981-03-01. It has received 9 citations till now. The article focuses on the topics: Bismuth & Annealing (metallurgy).read more
Citations
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Journal ArticleDOI
Quantum-size effects in n-type bismuth thin films
TL;DR: In this paper, the authors attribute this oscillatory behavior to quantum-size effects, which are observable when the electron mean-free path and Fermi wave length exceed the film thickness d.
Journal ArticleDOI
Semiconducting behavior of Ag2Te thin films and the dependence of band gap on thickness
V. Damodara Das,D. Karunakaran +1 more
TL;DR: In this paper, the electrical resistance of Ag2Te films has been measured as a function of temperature during heating, which was carried out immediately after the film formation, and the observed exponential decrease of resistance with temperature up to the transition point points to the semiconducting nature of the low temperature polymorph of ag2Te.
Journal ArticleDOI
Band gap and intergrain barrier activation energies in Bi90Sb10 thin films
V. Damodara Das,M.S. Jagadeesh +1 more
TL;DR: In this paper, electrical resistivity and Hall effect measurements have been made on vacuum evaporated Bi 90 Sb 10 alloy films of various thickness (350 A to 4500 A), in the temperature range of 77 to 510 K.
Journal ArticleDOI
Lattice distortion energy spectra of as-grown bismuth thin films and their thickness dependence
V. Damodara Das,N. Jayaprakash +1 more
TL;DR: In this paper, the initial lattice distortion energy spectra of as-grown bismuth thin films have been evaluated and it is found that the defects have preferential activation energy values around 1.06 eV, 1.14 eV and 1.32 ev.
Journal ArticleDOI
Oscillatory behaviour of resistivity with thickness in bismuth thin films
V. Damodara Das,N. Jayaprakash +1 more
TL;DR: In this article, it was shown that resistivity oscillates with thickness both for unannealed and annealed films and that the same kind of oscillatory behaviour with thickness is also observed in the case of defect resistivity.
References
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Journal ArticleDOI
Temperature Dependence of the Electrical Properties of Bismuth-Antimony Alloys
TL;DR: The electrical resistivity and Hall effect of zone-levelled single crystals of Bi-Sb alloys have been measured in the temperature range from 4.2 to 300 K as discussed by the authors.
Journal ArticleDOI
Size effect in the electrical properties of thin epitaxial bismuth films
Hajime Asahi,Akira Kinbara +1 more
TL;DR: The thickness dependence of the electrical properties of thin epitaxial bismuth films (of thickness 2-3 μm) was studied at 42 and 77 K in this article.
Journal ArticleDOI
Quantum and classical size effects in the thermoelectric power of thin bismuth films
D. D. Thornburg,C. M. Wayman +1 more
TL;DR: In this paper, anomalous behavior of the thermoelectric power of thin Bi films has been observed and the results are consistent with those anticipated, based on both quantum and classical size effects in scattering.
Journal ArticleDOI
Kinetic properties of electrons in bismuth thin films
Yu. F. Komnik,V.V. Andrievsky +1 more
TL;DR: In this article, the magnetic field dependence of σ xx and σ yx, calculated from an analysis of the data on ϱ, Δϱ/ϱ and the Hall e.m.f., and using the formula of the two-band model for strong and weak magnetic fields, was obtained.