Journal ArticleDOI
Performance potential of high-frequency heterojunction transistors
G.O. Ladd,D.L. Feucht +1 more
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In this article, the maximum frequency of oscillation for GaAs-Ge heterojunction transistors utilizing either doped or high-resistivity space-charge-limited emitters was calculated.Abstract:
Assuming a state-of-the-art microwave planar geometry, the maximum frequency of oscillation has been calculated for GaAs-Ge heterojunction transistors utilizing either doped or high-resistivity space-charge-limited emitters. This is compared with a Ge homojunction transistor of the same geometry. A detailed equivalent circuit is used which accounts for the parasitics of the chip. It is shown that if chip parasitics are neglected, GaA-Ge devices should outperform Ge devices by about 4 to 1 in power gain. In the geometry assumed, however both heterojunction and homojunction transistors are limited by wafer parasitics, particularly base contact resistance. The calculated figures of merit of the two types of devices are therefore quite similar.read more
Citations
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Heterostructure bipolar transistors and integrated circuits
TL;DR: In this paper, the authors propose an inverted transistor strucure with a smaller collectors on top and a larger emitter on the bottom, with speed advantages over the common "emitter-up" design.
Journal ArticleDOI
SiC devices: physics and numerical simulation
M. Ruff,H. Mitlehner,R. Helbig +2 more
TL;DR: In this article, the important material parameters for 6H silicon carbide (6H-SiC) are extracted from the literature and implemented into the 2D device simulation programs PISCES and BREAKDOWN and into the 1-D program OSSI Simulations of 6HSiC p-n junctions show the possibility to operate corresponding devices at temperatures up to 1000 K thanks to their low reverse current densities.
Journal ArticleDOI
An analysis of the performance of heterojunction phototransistors for fiber optic communications
TL;DR: In this article, the theory of operation of the heterojunction phototransistor (HPT) is reviewed and the limitations on gain and speed-of-response are examined in the context of fiber optic systems requirements.
References
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Journal ArticleDOI
Theory of a Wide-Gap Emitter for Transistors
TL;DR: In this paper, it was shown that the injection deficit of an emitter can be decreased by several orders of magnitude if the emitter has a higher band gap than the base region.
Journal ArticleDOI
Characteristics of the space-charge-limited dielectric diode at very high frequencies
J. Shao,G.T. Wright +1 more
TL;DR: In this paper, the incremental admittance of the space-charge-limited dielectric diode is calculated; it is shown that for all frequencies this can be represented as a conductance and susceptance in parallel.
Journal ArticleDOI
Junction Transistor Short-Circuit Current Gain and Phase Determination
D. E. Thomas,J. L. Moll +1 more
TL;DR: In this paper, the phase shift associated with the common-base current gain of a junction transistor is defined by Bode as "minimum," and the phase of the common base current gain is uniquely determined by its magnitude characteristic.
Journal ArticleDOI
The realization of a GaAs—Ge wide band gap emitter transistor
D.K. Jadus,D.L. Feucht +1 more
TL;DR: In this paper, the fabrication and properties of an n-GaAs emitter, p-Ge base, n-Ge collector transistor which possesses significant current gain is described, these GaAs wide band gap emitter transistors have shown incremental current gains near 15 when operated at current densities up to 3500 A/cm2.