Journal ArticleDOI
Photovoltaic Behaviors in an Isotype n-TiO 2 /n-Si Heterojunction
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TLDR
In this paper, an n-TiO2/n-Si isotype heterojunction is fabricated by depositing TiO2 thin films onto n-Si substrates.Abstract:
An n-TiO2/n-Si isotype heterojunction is fabricated by depositing TiO2 thin films onto n-Si substrates. Obvious photovoltaic behaviors are observed in this isotype heterojunction. The open circuit voltage and short circuit current of the heterojunction can reach 123 mV and 20 μA/cm2, respectively. The mechanism for the photovoltaic behaviors can be understood in terms of the band alignment of the heterojunction. The results reported may provide a feasible route to easily available and low-cost isotyped photovoltaic devices.read more
Citations
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Nanostructured-NiO/Si heterojunction photodetector
Bhaskar Parida,Seongjun Kim,Munsik Oh,Seonghoon Jung,Minkyung Baek,Jae-Hyun Ryou,Hyunsoo Kim +6 more
TL;DR: In this article, the fabrication of heterojunction photodetectors consisting of nanostructured NiO and Si was investigated, where the spin coating of colloidal Ni(OH)2 and subsequent thermal annealing at 400°C in air ambient led to the formation of NiO, in which a number of nanosheets (50-80nm in size and 11-15nm in height) were aggregated.
Journal ArticleDOI
Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress*
Sun Weiwei,Xue-Feng Zheng,Fan Shuang,Chong Wang,Du Ming,Kai Zhang,Wei-Wei Chen,Yan-Rong Cao,Wei Mao,Xiaohua Ma,Jincheng Zhang,Yue Hao +11 more
TL;DR: In this article, the degradation mechanism of enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs) fabricated by fluorine plasma ion implantation technology is investigated.
Journal ArticleDOI
Effect of cadmium sulfide thickness on electron beam-deposited titania/cadmium sulfide nanocomposite films
TL;DR: In this paper, the effect of varying CdS thickness on the structural, optical and electrical properties of a heterogeneous TiO2/CdS nanocomposite was examined.
Nanostructured Heterojunction Crystalline Silicon Solar Cells with Transition Metal Oxide Carrier Selective Contacts
TL;DR: In this paper, the authors presented several new ideas for novel silicon-based solar cells to develop efficient solar cells that can be fabricated in a low thermal budget, and with the low-cost fabrication procedure using only abundant ecocompatable materials.
Journal ArticleDOI
High-field-induced electron detrapping in an AlGaN/GaN high electron mobility transistor
TL;DR: In this article, a step stress test is carried out to study the reliability characteristics of an AlGaN/GaN high electron mobility transistor (HEMT), and an anomalous critical drain-to-gate voltage with a negative temperature coefficient is observed in the stress sequence, beyond which the HEMT device starts to recover from degradation induced by early lower voltage stress.
References
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Semiconductor ultraviolet detectors
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Journal ArticleDOI
High Density n-Si/n-TiO2 Core/Shell Nanowire Arrays with Enhanced Photoactivity
TL;DR: It is observed that highly dense Si/TiO(2) core/shell nanowire arrays enhanced the photocurrent by 2.5 times compared to planar Si/ TiO( 2) structure due to their low reflectance and high surface area.