Journal ArticleDOI
Picosecond laser‐induced melting and resolidification morphology on Si
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TLDR
In this article, a silicon crystal has been induced by picosecond laser pulses at 532 and 266 nm optical microscopy and electron diffraction revealed the formation of amorphous silicon details of surface morphology are sensitive functions of pulse intensity, energy, wavelength and crystallographic orientation.Abstract:
Ultrafast melting and resolidification on the surface of a silicon crystal has been induced by picosecond laser pulses at 532 and 266 nm Optical microscopy and electron diffraction revealed the formation of amorphous silicon Details of surface morphology are sensitive functions of pulse intensity, energy, wavelength, and crystallographic orientationread more
Citations
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Journal ArticleDOI
Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses
TL;DR: This review focuses on the nature of the non-thermal transitions in semiconductors under femtosecond laser excitation.
Journal ArticleDOI
Kinetics of solid phase crystallization in amorphous silicon
G.L. Olson,J.A. Roth +1 more
TL;DR: In this paper, the authors examined the crystallization behavior of a-Si over the temperature range from 500 °C to ∼ 1380°C and showed that the random crystallization process is a well-behaved function of temperature over that temperature range with an activation energy of 4 eV.
Journal ArticleDOI
The physical mechanisms of short-pulse laser ablation
TL;DR: In this article, it was shown that short-pulse laser ablation can be interpreted in terms of transient thermal processes involving states of matter with unusual thermodynamic, hydrodynamic and optical properties.
Journal ArticleDOI
Thermodynamic pathways to melting, ablation, and solidification in absorbing solids under pulsed laser irradiation
TL;DR: In this paper, the authors investigated the thermodynamic pathways involved in laser irradiation of absorbing solids in silicon for pulse durations of $500\phantom{\rule{0.3em}{0ex}}\mathrm{fs}$ and $100 \phantom{ 0.3m{0ex}ps}$.
Journal ArticleDOI
Heat of crystallization and melting point of amorphous silicon
TL;DR: In this article, the authors measured the heat of crystallization, ΔHac, to be 11.9±0.7 kJ/mol, substantially less than the value predicted by scaling ΔHAC of a•Ge.
References
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Journal ArticleDOI
Structural, Optical, and Electrical Properties of Amorphous Silicon Films
Journal ArticleDOI
Evidence of Voids Within the As-Deposited Structure of Glassy Silicon
Stephen Moss,J. F. Graczyk +1 more
TL;DR: In this article, electron diffraction data from amorphous silicon is presented, which cannot be reconciled with the intensity profiles derived from small-crystallite models based on the diamond structure.
Journal ArticleDOI
Amorphous semiconductors for switching, memory, and imaging applications
TL;DR: The performance and reliability of amorphous semiconductor devices that deal with the handling of information in the form of switching, modulation, storage, and display are discussed in this article.
Journal ArticleDOI
Laser annealing of boron-implanted silicon
R. T. Young,C. W. White,G. J. Clark,Jagdish Narayan,W. H. Christie,M. Murakami,P. W. King,S. D. Kramer +7 more
TL;DR: In this article, the properties of boron-implanted silicon annealed by high power Q-switched ruby laser radiation are compared with results obtained by conventional thermal annealing.
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