Journal ArticleDOI
Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage.
Dong-Ho Kang,Woo-Young Choi,Hyunsuk Woo,Sung Kyu Jang,Hyung-Youl Park,Jaewoo Shim,Jae-Woong Choi,Sungho Kim,Sanghun Jeon,Sungjoo Lee,Jin-Hong Park +10 more
TLDR
This research successfully presents the feasibility of PVP/PMF atomic switches for flexible integrated circuits for next-generation electronic applications.Abstract:
In this study, we demonstrate a high-performance solid polymer electrolyte (SPE) atomic switching device with low SET/RESET voltages (0.25 and -0.5 V, respectively), high on/off-current ratio (105), excellent cyclic endurance (>103), and long retention time (>104 s), where poly-4-vinylphenol (PVP)/poly(melamine-co-formaldehyde) (PMF) is used as an SPE layer. To accomplish these excellent device performance parameters, we reduce the off-current level of the PVP/PMF atomic switching device by improving the electrical insulating property of the PVP/PMF electrolyte through adjustment of the number of cross-linked chains. We then apply a titanium buffer layer to the PVP/PMF switching device for further improvement of bipolar switching behavior and device stability. In addition, we first implement SPE atomic switch-based logic AND and OR circuits with low operating voltages below 2 V by integrating 5 × 5 arrays of PVP/PMF switching devices on the flexible substrate. In particular, this low operating voltage of our logic circuits was much lower than that (>5 V) of the circuits configured by polymer resistive random access memory. This research successfully presents the feasibility of PVP/PMF atomic switches for flexible integrated circuits for next-generation electronic applications.read more
Citations
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Journal ArticleDOI
Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching
TL;DR: Improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide asThe bottom switching layer, using atomic layer deposition is achieved.
Journal ArticleDOI
A Coenzyme-Free Biocatalyst for the Value-Added Utilization of Lignin-Derived Aromatics
TL;DR: A coenzyme-free biocatalyst that could transform lignin-derived aromatics into various attractive pharmaceutical and polymer building blocks is devised that paves the way for enhancing the entire efficiency of biorefineries.
Journal ArticleDOI
Conductive-bridging random-access memories for emerging neuromorphic computing
Jun-Hwe Cha,Sang Yoon Yang,Jungyeop Oh,Shinhyun Choi,Sangsu Park,Byung Chul Jang,Won Bae Ahn,Sung-Yool Choi +7 more
TL;DR: The basics of operation of CBRAMs are examined in detail, from the formation of metal nanoclusters to filament bridging, and CBRAM-based ANNs are discussed, including deep neural networks and spiking neural networks, along with other emerging computing applications.
Journal ArticleDOI
Wirelessly destructible MgO-PVP-Graphene composite based flexible transient memristor for security applications
TL;DR: In this paper, an ultra-fast wirelessly destructible non-volatile memory using a novel MgO-PVP-Gr composite material synthesized by a low cost solution processed method is presented.
Journal ArticleDOI
Efficient flash memory devices based on non-conjugated ferrocene-containing copolymers
Jing Xiang,Xiangling Li,Yun Ma,Qiang Zhao,Cheuk Lam Ho,Cheuk Lam Ho,Wai Yeung Wong,Wai Yeung Wong +7 more
TL;DR: A series of non-conjugated ferrocene-containing copolymers with a triphenylamine (TPA), benzothiazole (BT) or phenothiazine (PHZ) unit has been designed and synthesized via a facile radical polymerization protocol as discussed by the authors.
References
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Journal ArticleDOI
High-mobility polymer gate dielectric pentacene thin film transistors
TL;DR: In this article, a spin-coated polymer gate dielectric layer was used to obtain a polyvinylphenol-based copolymer-based transistor with a carrier mobility as large as 3 cm2/V's and sub-threshold swing as low as 0.5 V/decade.
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Quantized conductance atomic switch
TL;DR: It is demonstrated that a quantized conductance atomic switch (QCAS) can switch between ‘on’ and ‘off’ states at room temperature and in air at a frequency of 1 MHz and at a small operating voltage (600 mV).
Journal ArticleDOI
Nanoscale memory elements based on solid-state electrolytes
TL;DR: In this article, electron beam lithography was used to make sub-100-nm openings in polymethylmethacrylate layers used as the dielectric between the device electrodes, and solid electrolyte film was formed in these via-holes so that their small diameter defined the active switching area between the electrodes.
Journal ArticleDOI
Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von‐Neumann Computers
TL;DR: Novel functions, such as selective volatile/nonvolatile, synaptic, memristive, and photo-assisted operations have been demonstrated, which can not only improve the performance of present-day electronic systems, but also enable development of new types of electronic systems such as beyond von- Neumann computers.
Journal ArticleDOI
Sericin for Resistance Switching Device with Multilevel Nonvolatile Memory
Hong Wang,Fanben Meng,Yurong Cai,Liyan Zheng,Yuangang Li,Yuanjun Liu,Yueyue Jiang,Xiaotian Wang,Xiaodong Chen +8 more
TL;DR: Excellent memory characteristics with a resistance OFF/ON ratio larger than 10(6) have been obtained and a multilevel memory based on sericin has been achieved, indicating the environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.