Journal ArticleDOI
Preparation and characterization of MOCVD bismuth telluride thin films
TLDR
The thermoelectric, electric and structural properties of Bi 2 Te 3 thin films grown by MOCVD have been investigated as mentioned in this paper The Seebeck coefficient shows that all the samples were n-type conductors decreasing from 213 to 129μV/K when the carrier concentration increases from 9×10 19 to 3×10 20 cm −3.About:
This article is published in Journal of Crystal Growth.The article was published on 1998-12-01. It has received 57 citations till now. The article focuses on the topics: Seebeck coefficient & Bismuth telluride.read more
Citations
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Journal ArticleDOI
Structure of Bismuth Telluride Nanowire Arrays Fabricated by Electrodeposition into Porous Anodic Alumina Templates
TL;DR: In this article, bismuth telluride (Bi2Te3) nanowires with diameters of ∼25, ∼50, and ∼75 nm have been produced by electrochemical deposition into porous anodic alumina templates.
Journal ArticleDOI
Fabrication and characterization of bismuth–telluride-based alloy thin film thermoelectric generators by flash evaporation method
TL;DR: In this article, Bismuth-telluride-based alloy thin-film thermoelectric generators are fabricated by a flash evaporation method and the output voltage and the maximum output power near room temperature are estimated as a function of the temperature difference between hot and cold junctions of the thin-filtered generators.
Journal ArticleDOI
Transport properties of V–VI semiconducting thermoelectric BiSbTe alloy thin films and their application to micromodule Peltier devices
TL;DR: In this paper, the detailed temperature dependence of electrical resistivity, n-and p-type carrier concentration, and Hall mobility of polycrystalline BiSbTe alloys (V-VI semiconductors) are presented.
Journal ArticleDOI
Pulsed electrodeposition of bismuth telluride films: Influence of pulse parameters over nucleation and morphology
TL;DR: In this paper, a pulsed electrodeposition method was applied to the preparation of bismuth telluride films and the formation of Bi2Te3 nuclei proceeded through a three-dimensional instantaneous nucleation mode.
Journal ArticleDOI
Synthesis of uniform CoTe and NiTe semiconductor nanocluster wires through a novel coreduction method.
Qing Peng,Yajie Dong,Yadong Li +2 more
TL;DR: A novel coreduction method was developed to synthesize uniform one-dimensional CoTe and NiTe nanocluster wires using soluble Na( 2)TeO(3) was used to supply a highly reactive Te source and N(2)H(4).
References
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BookDOI
CRC Handbook of Thermoelectrics
TL;DR: In this article, Rowe et al. proposed a method for reducing the thermal conductivity of a thermoelectric generator by reducing the carrier concentration of the generator, which was shown to improve the generator's performance.
Book
Organometallic Vapor-Phase Epitaxy: Theory and Practice
TL;DR: The OMVPE process as mentioned in this paper is a process of physical processes occurring on the surface of the Earth, and it has been used in many applications in the computer science community, e.g. superlattice structures.
Journal ArticleDOI
Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide
TL;DR: In this article, the electronic structures of the two thermoelectric materials were studied using density-functional theory with the spin-orbit interaction included, and the electron states in the gap region and the chemical bonding can be described in terms of interaction between the atomic p orbitals within the ''quintuple'' layer.
Journal ArticleDOI
MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications
TL;DR: In this article, the characteristics of metalorganic chemical vapor deposition (MOCVD) of Bi2Te3, Sb 2Te3 and their superlattice structures are discussed.
Journal ArticleDOI
Properties of thin film thermoelectric materials: application to sensors using the Seebeck effect
TL;DR: In this paper, the Seebeck coefficient α, electrical resistivity ϱ, thermal conductivity K and the coefficient Z of thermoelectric merit, are determined for narrow-gap V2VI3 semiconductors and semimetals.